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dc.contributor.authorLi, Ren
dc.contributor.authorAzhigulov, Dias
dc.contributor.authorAllehyani, Ahmed
dc.contributor.authorFariborzi, Hossein
dc.date.accessioned2020-01-06T08:53:16Z
dc.date.available2020-01-06T08:53:16Z
dc.date.issued2020
dc.identifier.urihttp://hdl.handle.net/10754/660939
dc.description.abstractIn the past few years, Back-End-of-Line (BEOL) Nano-electromechanical (NEM) relays have emerged as promising switching devices for the beyond-CMOS era, due to their zeroleakage current property, and the compatibility to CMOS fabrication processes. Though the mechanical movement causes the relays to be inherently slower than transistors, the metallic contact interface untethers the limitation on gate-to-drain voltage,which makes the relays capable of handling higher voltages. In thiswork, we propose novel designs for BEOL NEM relay-based inductorless DC-DC converters for on-chip voltage conversions. The design, implementation, and analysis of buck (step-down) and boost (step-up) converters are shown. Both converters consist of only four NEM relays, respectively. By utilizing the charge pump topology in a switched-capacitor configuration, the relay converters exhibit lower output ripple and higher efficiency compared to their CMOS counterparts. This is particularly valuable for DC-DC voltage conversions in the Internet of Things chips, where the converter switching frequency is moderate, while the demands for efficiency, area saving, and on-chip integration are high
dc.publisherIEEE
dc.subjectBack-end-of-line
dc.subjectnanoelectromechanical relay
dc.subjectbuck converter
dc.subjectboost converter
dc.subjectcharge pump
dc.subjectswitched capacitor
dc.titleBEOL NEM Relay-Based Inductorless DC-DC Converters
dc.typeConference Paper
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.conference.dateMay 17-20, 2020
dc.conference.nameThe IEEE International Symposium on Circuits and Systems (ISCAS) 2020
dc.conference.locationSeville, Spain
dc.eprint.versionPost-print
dc.contributor.institutionElectrical and Computer Engineering Department, Nazarbayev University, Nur-Sultan, Kazakhstan
dc.contributor.institutionElectrical and Electronic Engineering Department, Jeddah University, Jeddah, Saudi Arabia
pubs.publication-statusAccepted
kaust.personLi, Ren
kaust.personFariborzi, Hossein
refterms.dateFOA2020-01-06T08:53:17Z


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