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dc.contributor.authorAjia, Idris A.
dc.contributor.authorMiranda, S. M. C.
dc.contributor.authorFranco, N.
dc.contributor.authorAlves, E.
dc.contributor.authorLorenz, K.
dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorRoqan, Iman S.
dc.date.accessioned2019-12-29T12:14:41Z
dc.date.available2019-12-29T12:14:41Z
dc.date.issued2018-11-21
dc.identifier.citationMaterial Sci & Eng. 2018;2(6):193-197
dc.identifier.doi10.15406/mseij.2018.02.00056
dc.identifier.urihttp://hdl.handle.net/10754/660851
dc.description.abstractWe report on structural and optical properties of InGaN/GaN thin films, with a 0.46o misalignment between the surface and the (0001) plane, which were grown by metal-organic chemical vapor deposition (MOCVD) on 0.34o miscut sapphire substrates. X-ray diffraction and X-ray reflectivity were used to precisely measure the degree of miscut. Reciprocal space mapping was employed to determine the lattice parameters and strain state of the InGaN layers. Rutherford backscattering spectrometry with channeling was employed to measure their composition and crystalline quality with depth resolution. No strain anisotropy was observed. Polarization-dependent photoluminescence spectroscopy was carried out to examine the effect of the miscut on the bandedge emission of the epilayer.
dc.description.sponsorshipThe author thanks KAUST for the finance support.
dc.publisherMedCrave Group, LLC
dc.relation.urlhttps://arxiv.org/pdf/1902.06592
dc.relation.urlhttp://arxiv.org/pdf/1902.06592
dc.rightsArchived with thanks to arXiv
dc.titlestructural and optical properties of InxGa1-xN/GaN epilayers grown on a miscut sapphire substrate
dc.typePreprint
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.eprint.versionPre-print
dc.contributor.institutionInstituto Superior Técnico, Portugal
dc.contributor.institutionDepartment of Physics, University of Strathclyde, United Kingdom
dc.identifier.arxivid1902.06592
kaust.personAjia, Idris A.
kaust.personRoqan, Iman S.
dc.versionv1
refterms.dateFOA2019-12-29T12:15:48Z
dc.date.posted2019-02-18


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