Show simple item record

dc.contributor.authorZhou, Liang
dc.contributor.authorChen, Junshu
dc.contributor.authorChen, Xiaobin
dc.contributor.authorXi, Bin
dc.contributor.authorQiu, Yang
dc.contributor.authorZhang, Junwei
dc.contributor.authorWang, Linjing
dc.contributor.authorZhang, Runnan
dc.contributor.authorYe, Bicong
dc.contributor.authorChen, Pingbo
dc.contributor.authorZhang, Xixiang
dc.contributor.authorGuo, Guoping
dc.contributor.authorYu, Dapeng
dc.contributor.authorMei, Jia-Wei
dc.contributor.authorYe, Fei
dc.contributor.authorWang, Gan
dc.contributor.authorHe, Hongtao
dc.date.accessioned2019-12-19T11:40:14Z
dc.date.available2019-12-19T11:40:14Z
dc.date.issued2019-03-15
dc.identifier.urihttp://hdl.handle.net/10754/660702
dc.description.abstractWe implement the molecular beam epitaxy method to embed the black-phosphorus-like bismuth nanosheets into the bulk ferromagnet Cr$_2$Te$_3$. As a typical surfactant, bismuth lowers the surface tensions and mediates the layer-by-layer growth of Cr$_2$Te$_3$. Meanwhile, the bismuth atoms precipitate into black-phosphorus-like nanosheets with the lateral size of several tens of nanometers. In Cr$_2$Te$_3$ embedded with Bi-nanosheets, we observe simultaneously a large topological Hall effect together with the magnetic susceptibility plateau and magnetoresistivity anomaly. As a control experiment, none of these signals is observed in the pristine Cr$_2$Te$_3$ samples. Therefore, the Bi-nanosheets serve as seeds of topological Hall effect induced by non-coplanar magnetic textures planted into Cr$_2$Te$_3$. Our experiments demonstrate a new method to generates a large topological Hall effect by planting strong spin-orbit couplings into the traditional ferromagnet, which may have potential applications in spintronics.
dc.publisherarXiv
dc.relation.urlhttps://arxiv.org/pdf/1903.06486
dc.rightsArchived with thanks to arXiv
dc.titleTopological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets
dc.typePreprint
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.eprint.versionPre-print
dc.contributor.institutionInstitute for Quantum Science and Engineering, and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
dc.contributor.institutionSchool of Science, Harbin Institute of Technology, Shenzhen 518055, China
dc.contributor.institutionCollege of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China
dc.contributor.institutionMaterials Characterization and Preparation Center,
dc.contributor.institutionKey Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
dc.contributor.institutionShenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
dc.identifier.arxivid1903.06486
kaust.personZhang, Junwei
kaust.personZhang, Xixiang
dc.versionv1
refterms.dateFOA2019-12-19T11:40:56Z


Files in this item

Thumbnail
Name:
Preprintfile1.pdf
Size:
2.021Mb
Format:
PDF
Description:
Pre-print

This item appears in the following Collection(s)

Show simple item record