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dc.contributor.authorWu, Yingying
dc.contributor.authorZhang, Senfu
dc.contributor.authorZhang, Junwei
dc.contributor.authorWang, Wei
dc.contributor.authorZhu, Yang Lin
dc.contributor.authorHu, Jin
dc.contributor.authorYin, Gen
dc.contributor.authorWong, Kin
dc.contributor.authorFang, Chi
dc.contributor.authorWan, Caihua
dc.contributor.authorHan, Xiufeng
dc.contributor.authorShao, Qiming
dc.contributor.authorTaniguchi, Takashi
dc.contributor.authorWatanabe, Kenji
dc.contributor.authorZang, Jiadong
dc.contributor.authorMao, Zhiqiang
dc.contributor.authorZhang, Xixiang
dc.contributor.authorWang, Kang L.
dc.date.accessioned2020-07-16T07:04:35Z
dc.date.available2019-12-19T10:58:30Z
dc.date.available2020-07-16T07:04:35Z
dc.date.issued2020-07-31
dc.date.submitted2020-02-14
dc.identifier.citationWu, Y., Zhang, S., Zhang, J., Wang, W., Zhu, Y. L., Hu, J., … Wang, K. L. (2020). Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure. Nature Communications, 11(1). doi:10.1038/s41467-020-17566-x
dc.identifier.issn2041-1723
dc.identifier.pmid32737289
dc.identifier.doi10.1038/s41467-020-17566-x
dc.identifier.urihttp://hdl.handle.net/10754/660701
dc.description.abstractThe promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials provide a new platform for the discovery of novel physics and effects. Here we demonstrate the Dzyaloshinskii–Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmion lattice and the stripe-like magnetic domain structures as well. The interfacial coupling induced Dzyaloshinskii–Moriya interaction is estimated to have a large energy of 1.0 mJ m−2. This work paves a path towards the skyrmionic devices based on van der Waals layered heterostructures.
dc.description.sponsorshipThe sample synthesis and characterization efforts are supported by the US Department of Energy under grand DE-SC0019068. The transport measurements in this work are supported by the ARO program under contract W911NF-15-1-10561, National Science Foundation with Award nos. 1935362 and 1909416, the Spins and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under award #SC0012670. We are also grateful to the support from the National Science Foundation (DMR-1411085) and DOE, Office of Science, BES under Award No. DESC0020221. L-TEM measurements is based on research supported by the King Abdullah University of Science and Technology, Office of Sponsored Research and under the award No. OSR-2016-CRG5-2977.
dc.publisherSpringer Nature
dc.relation.urlhttp://www.nature.com/articles/s41467-020-17566-x
dc.relation.urlhttps://www.nature.com/articles/s41467-020-17566-x.pdf
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.titleNéel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.identifier.journalNature Communications
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of California—Los Angeles, Los Angeles, CA, 90095, USA
dc.contributor.institutionKey Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
dc.contributor.institutionDepartment of Physics, Pennsylvania State University, University Park, PA, 16802, USA
dc.contributor.institutionDepartment of Physics, University of Arkansas, Fayetteville, AR, 72701, USA
dc.contributor.institutionInstitute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
dc.contributor.institutionNational Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
dc.contributor.institutionDepartment of Physics and Astronomy, University of New Hampshire, Durham, NH, 03824, USA
dc.identifier.volume11
dc.identifier.issue1
dc.identifier.arxivid1907.11349
kaust.personZhang, Senfu
kaust.personZhang, Junwei
kaust.personZhang, Xixiang
kaust.grant.numberOSR-2016-CRG5-2977
dc.date.accepted2020-07-05
dc.identifier.eid2-s2.0-85088856818
refterms.dateFOA2019-12-19T10:59:21Z
kaust.acknowledged.supportUnitOSR
dc.date.published-online2020-07-31
dc.date.published-print2020-12
dc.date.posted2019-07-26


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