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    Hybrid organic–metal oxide multilayer channel transistors with high operational stability

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    Type
    Article
    Authors
    Lin, Yen-Hung cc
    Li, Wen
    Faber, Hendrik cc
    Seitkhan, Akmaral cc
    Hastas, Nikolaos A. cc
    Khim, Dongyoon
    Zhang, Qiang cc
    Zhang, Xixiang cc
    Pliatsikas, Nikolaos cc
    Tsetseris, Leonidas cc
    Patsalas, Panos A.
    Bradley, Donal cc
    Huang, Wei
    Anthopoulos, Thomas D. cc
    KAUST Department
    Imaging and Characterization Core Lab
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Nanofabrication Core Lab
    Office of the VP
    Physical Science and Engineering (PSE) Division
    Thin Films & Characterization
    Date
    2019-12-16
    Preprint Posting Date
    2019-10-24
    Online Publication Date
    2019-12-16
    Print Publication Date
    2019-12
    Embargo End Date
    2020-06-16
    Permanent link to this record
    http://hdl.handle.net/10754/660700
    
    Metadata
    Show full item record
    Abstract
    Metal oxide thin-film transistors are increasingly used in the driving backplanes of organic light-emitting diode displays. Commercial devices currently rely on metal oxides processed via physical vapour deposition methods, but the use of solution-based processes could provide a simpler, higher-throughput approach that would be more cost effective. However, creating oxide transistors with high carrier mobility and bias-stable operation using such processes has proved challenging. Here we show that transistors with high electron mobility (50 cm2 V−1 s−1) and operational stability can be fabricated from solution-processed multilayer channels composed of ultrathin layers of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and compact zinc oxide. Insertion of the ozone-treated polystyrene interlayer passivates electron traps in the channel and reduces bias-induced instability during continuous transistor operation over a period of 24 h and under a high electric-field flux density (2.1 × 10−6 C cm−2). Furthermore, incorporation of the pre-synthesized aluminium-doped zinc oxide nanoparticles enables controlled n-type doping of the hybrid channels, providing additional control over the operating characteristics of the transistors.
    Citation
    Lin, Y.-H., Li, W., Faber, H., Seitkhan, A., Hastas, N. A., Khim, D., … Anthopoulos, T. D. (2019). Hybrid organic–metal oxide multilayer channel transistors with high operational stability. Nature Electronics, 2(12), 587–595. doi:10.1038/s41928-019-0342-y
    Sponsors
    Y.-H.L., H.F., D.K. and T.D.A. are grateful to the European Research Council (ERC) AMPRO project no. 280221 for financial support. N.A.H. and T.D.A. are grateful to the European Research Council (ERC) Marie Sklodowska-Curie grant no. 661127 for financial support. The authors thank King Abdullah University of Science and Technology (KAUST) for financial support and for facilitating access to the Core Laboratories. L.T. acknowledges support for the computational time granted from GRNET in the National HPC facility—ARIS—under project STEM-2.
    Publisher
    Springer Science and Business Media LLC
    Journal
    Nature Electronics
    DOI
    10.1038/s41928-019-0342-y
    arXiv
    1910.11013
    Additional Links
    http://www.nature.com/articles/s41928-019-0342-y
    ae974a485f413a2113503eed53cd6c53
    10.1038/s41928-019-0342-y
    Scopus Count
    Collections
    Nanofabrication Core Lab; Preprints; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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