• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguidePlumX LibguideSubmit an Item

    Statistics

    Display statistics

    Full voltage manipulation of the resistance of a magnetic tunnel junction

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    Articlefile1.pdf
    Size:
    1.463Mb
    Format:
    PDF
    Description:
    Publisher's Version/PDF
    Download
    Type
    Article
    Authors
    Chen, Aitian cc
    Zhao, Yuelei
    Wen, Yan
    Pan, Long cc
    Li, Peisen
    Zhang, Xixiang cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2019-12-13
    Online Publication Date
    2019-12-13
    Print Publication Date
    2019-12
    Permanent link to this record
    http://hdl.handle.net/10754/660626
    
    Metadata
    Show full item record
    Abstract
    One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.
    Citation
    Chen, A., Zhao, Y., Wen, Y., Pan, L., Li, P., & Zhang, X.-X. (2019). Full voltage manipulation of the resistance of a magnetic tunnel junction. Science Advances, 5(12), eaay5141. doi:10.1126/sciadv.aay5141
    Sponsors
    We acknowledge the Nanofabrication Core Lab at King Abdullah University of Science and Technology (KAUST) for excellent assistance.
    This work was supported by KAUST Office of Sponsored Research (OSR) under award no. CRF-2017- 3427-CRG6. P.L. acknowledges support from the National Natural Science Foundation of China (grant no. 11604384) and the State Key Laboratory of Low-Dimensional Quantum Physics (grant no. KF201717).
    Publisher
    American Association for the Advancement of Science (AAAS)
    Journal
    Science Advances
    DOI
    10.1126/sciadv.aay5141
    Additional Links
    http://advances.sciencemag.org/lookup/doi/10.1126/sciadv.aay5141
    https://advances.sciencemag.org/content/advances/5/12/eaay5141.full.pdf
    ae974a485f413a2113503eed53cd6c53
    10.1126/sciadv.aay5141
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

    entitlement

     
    DSpace software copyright © 2002-2021  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.