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    Deep-Ultraviolet β-Ga2O3 Photodetectors Grown on MgO Substrates with a TiN Template

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    Type
    Conference Paper
    Authors
    Li, Kuang-Hui
    Alfaraj, Nasir cc
    Kang, Chun Hong
    Braic, Laurentiu
    Zoita, Nicolae Catalin
    Kiss, Adrian Emil
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Materials Science and Engineering Program
    Electrical Engineering Program
    Thin Films & Characterization
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Date
    2019-11-25
    Online Publication Date
    2019-11-25
    Print Publication Date
    2019-09
    Permanent link to this record
    http://hdl.handle.net/10754/660457
    
    Metadata
    Show full item record
    Abstract
    This work investigates β-Ga2O3 photodetectors grown on MgO substrates with a TiN template, showing peak responsivities of 34.91 and 224.09 A/W at 5 and 15V reverse-bias, respectively, for 250-nm incident-light wavelength. A mesa device structure exhibited a 213.75% peak-responsivity increase at 15 V reverse-bias.
    Citation
    Li, K.-H., Alfaraj, N., Kang, C. H., Braic, L., Zoita, N. C., Kiss, A. E., … Ooi, B. S. (2019). Deep-Ultraviolet β-Ga2O3 Photodetectors Grown on MgO Substrates with a TiN Template. 2019 IEEE Photonics Conference (IPC). doi:10.1109/ipcon.2019.8908509
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Conference/Event name
    2019 IEEE Photonics Conference (IPC)
    DOI
    10.1109/IPCon.2019.8908509
    Additional Links
    https://ieeexplore.ieee.org/document/8908509/
    https://ieeexplore.ieee.org/document/8908509/
    https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8908509
    ae974a485f413a2113503eed53cd6c53
    10.1109/IPCon.2019.8908509
    Scopus Count
    Collections
    Conference Papers; Electrical and Computer Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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