Deep-Ultraviolet β-Ga2O3 Photodetectors Grown on MgO Substrates with a TiN Template

Type
Conference Paper
Authors
Li, Kuang-Hui
Alfaraj, Nasir cc
Kang, Chun Hong
Braic, Laurentiu
Zoita, Nicolae Catalin
Kiss, Adrian Emil
Ng, Tien Khee cc
Ooi, Boon S. cc
KAUST Department
Materials Science and Engineering Program
Electrical Engineering Program
Thin Films & Characterization
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Date
2019-11-25
Online Publication Date
2019-11-25
Print Publication Date
2019-09
Permanent link to this record
http://hdl.handle.net/10754/660457

Metadata
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Abstract
This work investigates β-Ga2O3 photodetectors grown on MgO substrates with a TiN template, showing peak responsivities of 34.91 and 224.09 A/W at 5 and 15V reverse-bias, respectively, for 250-nm incident-light wavelength. A mesa device structure exhibited a 213.75% peak-responsivity increase at 15 V reverse-bias.
Citation
Li, K.-H., Alfaraj, N., Kang, C. H., Braic, L., Zoita, N. C., Kiss, A. E., … Ooi, B. S. (2019). Deep-Ultraviolet β-Ga2O3 Photodetectors Grown on MgO Substrates with a TiN Template. 2019 IEEE Photonics Conference (IPC). doi:10.1109/ipcon.2019.8908509
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Conference/Event name
2019 IEEE Photonics Conference (IPC)
DOI
10.1109/IPCon.2019.8908509
Additional Links
https://ieeexplore.ieee.org/document/8908509/
https://ieeexplore.ieee.org/document/8908509/
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8908509
Collections
Conference Papers; Electrical and Computer Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division