Deep-Ultraviolet β-Ga2O3 Photodetectors Grown on MgO Substrates with a TiN Template
Type
Conference PaperAuthors
Li, Kuang-HuiAlfaraj, Nasir

Kang, Chun Hong
Braic, Laurentiu
Zoita, Nicolae Catalin
Kiss, Adrian Emil
Ng, Tien Khee

Ooi, Boon S.

KAUST Department
Materials Science and Engineering ProgramElectrical Engineering Program
Thin Films & Characterization
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Date
2019-11-25Online Publication Date
2019-11-25Print Publication Date
2019-09Permanent link to this record
http://hdl.handle.net/10754/660457
Metadata
Show full item recordAbstract
This work investigates β-Ga2O3 photodetectors grown on MgO substrates with a TiN template, showing peak responsivities of 34.91 and 224.09 A/W at 5 and 15V reverse-bias, respectively, for 250-nm incident-light wavelength. A mesa device structure exhibited a 213.75% peak-responsivity increase at 15 V reverse-bias.Citation
Li, K.-H., Alfaraj, N., Kang, C. H., Braic, L., Zoita, N. C., Kiss, A. E., … Ooi, B. S. (2019). Deep-Ultraviolet β-Ga2O3 Photodetectors Grown on MgO Substrates with a TiN Template. 2019 IEEE Photonics Conference (IPC). doi:10.1109/ipcon.2019.8908509Conference/Event name
2019 IEEE Photonics Conference (IPC)Additional Links
https://ieeexplore.ieee.org/document/8908509/https://ieeexplore.ieee.org/document/8908509/
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8908509
ae974a485f413a2113503eed53cd6c53
10.1109/IPCon.2019.8908509