An efficient and stable photoelectrochemical system with 9% solar-to-hydrogen conversion efficiency via InGaP/GaAs double junction.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Solar Center (KSC)
Online Publication Date2019-11-21
Print Publication Date2019-12
Permanent link to this recordhttp://hdl.handle.net/10754/660450
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AbstractDespite III-V semiconductors demonstrating extraordinary solar-to-hydrogen (STH) conversion efficiencies, high cost and poor stability greatly impede their practical implementation in photoelectrochemical (PEC) water splitting applications. Here, we present a simple and efficient strategy for III-V-based photoelectrodes that functionally and spatially decouples the light harvesting component of the device from the electrolysis part that eliminates parasitic light absorption, reduces the cost, and enhances the stability without any compromise in efficiency. The monolithically integrated PEC cell was fabricated by an epitaxial lift-off and transfer of inversely grown InGaP/GaAs to a robust Ni-substrate and the resultant photoanode exhibits an STH efficiency of ~9% with stability ~150 h. Moreover, with the ability to access both sides of the device, we constructed a fully-integrated, unassisted-wireless
CitationVaradhan, P., Fu, H.-C., Kao, Y.-C., Horng, R.-H., & He, J.-H. (2019). An efficient and stable photoelectrochemical system with 9% solar-to-hydrogen conversion efficiency via InGaP/GaAs double junction. Nature Communications, 10(1). doi:10.1038/s41467-019-12977-x
SponsorsJ.H.H. greatly acknowledges the baseline funding from King Abdullah University of Science and Technology (KAUST) and the seed funding from the KAUST Solar Center. P.V. greatly acknowledges Vinoth Ramalingam and Maolin Zhang for helpful discussions.
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