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dc.contributor.authorLiu, Zeng
dc.contributor.authorZhi, Yusong
dc.contributor.authorLi, Shan
dc.contributor.authorLiu, Yuanyuan
dc.contributor.authorTang, Xiao
dc.contributor.authorYan, Zuyong
dc.contributor.authorLi, Peigang
dc.contributor.authorLi, Xiaohang
dc.contributor.authorGuo, Daoyou
dc.contributor.authorWu, Zhenping
dc.contributor.authorTang, Weihua
dc.date.accessioned2019-12-05T10:47:49Z
dc.date.available2019-12-05T10:47:49Z
dc.date.issued2019-12-13
dc.identifier.citationLiu, Z., Zhi, Y., Li, S., Liu, Y., Tang, X., Yan, Z., … Tang, W. (2019). Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film. Journal of Physics D: Applied Physics. doi:10.1088/1361-6463/ab596f
dc.identifier.doi10.1088/1361-6463/ab596f
dc.identifier.urihttp://hdl.handle.net/10754/660429
dc.description.abstractSchottky and Ohmic contacts are key matters affecting carrier transport in oxide semiconductor based electrical and optical devices. For Ga2O3, the comparison of optoelectrical behaviors and the fundamental physical mechanism between these two contacts are not well known yet. In this work, β-Ga2O3 thin films were grown via metal-organic chemical vapor deposition then deposited with symmetrical Ni/Au (Schottky) or Ti/Au (Ohmic) contacts. Optoelectrical measurements show that the Ohmic contacted device exhibits superior responsivities thanks to their higher photocurrents. While for the Schottky contacted device, firstly, it has faster response speed, secondly it exhibits larger photo-to-dark current ratios owing to their low dark current. Specifically, the voltage- and light intensity-dependent responsivity and detectivities of the Schottky and Ohmic contacted devices were measured and discussed under the consideration of different voltages and UV light intensities.
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China (Grant Nos.61774019, 51572033, and 51572241), the Beijing Municipal Commission of Science and Technology, China (Grant No. SX2018-04). In addition, the authors acknowledged the Fundamental Research Funds for the Central Universities and the Foundation of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts andTelecommunications).
dc.publisherIOP Publishing
dc.relation.urlhttps://iopscience.iop.org/article/10.1088/1361-6463/ab596f
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6463/ab596f
dc.rights.uriCC BY-NC-ND 3.0 licence
dc.titleComparison of optoelectrical characteristics between Schottky and Ohmic contacts to $\beta-Ga_{2}O_{3}$ thin film
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalJournal of Physics D: Applied Physics
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionLaboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, People’s Republic of China
dc.contributor.institutionCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
dc.contributor.institutionThe Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of Chin
dc.contributor.institutionCenter for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People’s Republic of China
kaust.personTang, Xiao
kaust.personLi, Xiaohang
refterms.dateFOA2019-12-05T10:49:20Z
dc.date.published-online2019-12-13
dc.date.published-print2020-02-20


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