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dc.contributor.authorAlatawi, Abdullah
dc.contributor.authorHolguin Lerma, Jorge Alberto
dc.contributor.authorKang, Chun Hong
dc.contributor.authorShen, Chao
dc.contributor.authorAlbadri, Abdulrahman M.
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2019-12-03T13:35:10Z
dc.date.available2019-12-03T13:35:10Z
dc.date.issued2019-10-17
dc.identifier.citationAlatawi, A. A., Holguin-Lerma, J. A., Kang, C. H., Shen, C., Albadri, A. M., Alyamani, A. Y., … Ooi, B. S. (2019). Blue Superluminescent Diode on c-Plane GaN Beyond Gigahertz Modulation Bandwidth for Visible Light Communication. 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). doi:10.1109/cleoe-eqec.2019.8872656
dc.identifier.doi10.1109/CLEOE-EQEC.2019.8872656
dc.identifier.urihttp://hdl.handle.net/10754/660395
dc.description.abstractRecently, GaN light-emitting diode (LED) and laser-diode (LD) have recently been developed for solid-state lighting (SSL) and visible light communication (VLC) [1, 2]. Superluminescent diode (SLD), which operates in the amplified spontaneous emission (ASE) mode offers further niche in SSL and VLC applications. The ASE (superluminescent) occurs when the optical feedback is suppressed, and thus inhibiting the onset of lasing. SLD offers speckles-free emission that is associated with LD, as well as exhibits shorter carrier lifetime since it operates in the ASE regime. The ASE results in a high modulation bandwidth and high data rate [3], as compared to LED, which operates in the spontaneous emission regime. In our previous work, we have demonstrated 560 MHz [4] and 800 MHz [3] of modulation bandwidth for semipolar-based SLDs. However, the expensive production cost of those substrates prevents them from wide-availability. Thus, here, we demonstrate a c-plane GaN-based SLD emitting at 442 nm with beyond GHz of bandwidth for simultaneous dual SSL-VLC technology.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttps://ieeexplore.ieee.org/document/8872656/
dc.relation.urlhttps://ieeexplore.ieee.org/document/8872656/
dc.relation.urlhttps://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8872656
dc.rights(c) 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.titleBlue Superluminescent Diode on c-Plane GaN Beyond Gigahertz Modulation Bandwidth for Visible Light Communication
dc.typeConference Paper
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.conference.date23-27 June 2019
dc.conference.name2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
dc.conference.locationMunich, Germany
dc.eprint.versionPost-print
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086, Saudi Arabia
kaust.personAlatawi, Abdullah
kaust.personHolguin Lerma, Jorge Alberto
kaust.personKang, Chun Hong
kaust.personShen, Chao
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
refterms.dateFOA2019-12-05T07:13:56Z
dc.date.published-online2019-10-17
dc.date.published-print2019-06


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