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dc.contributor.authorShakfa, Mohammad Khaled
dc.contributor.authorLamperti, Marco
dc.contributor.authorGatti, Davide
dc.contributor.authorMarangoni, Marco
dc.contributor.authorFarooq, Aamir
dc.date.accessioned2019-12-03T13:17:51Z
dc.date.available2019-12-03T13:17:51Z
dc.date.issued2019-10-17
dc.identifier.citationShakfa, M. K., Lamperti, M., Gatti, D., Marangoni, M., & Farooq, A. (2019). A 12.6 – 15 μm Mid-IR Source Based on Difference Frequency Generation in Orientation-Patterned GaAs. 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). doi:10.1109/cleoe-eqec.2019.8872716
dc.identifier.doi10.1109/CLEOE-EQEC.2019.8872716
dc.identifier.urihttp://hdl.handle.net/10754/660394
dc.description.abstractTunable laser sources in the mid-infrared (mid-IR) spectral range have been of great interest for a variety of applications such as molecular spectroscopy and trace gas detection. Difference-frequency generation (DFG) based on nonlinear frequency conversion in nonlinear crystals has been an effective approach to realize tunable mid-IR laser sources [1]. Among nonlinear crystals, orientation-patterned (OP) GaAs has been highly attractive for mid-IR DFG laser sources due to its large nonlinear susceptibility, lack of birefringence, wide transparency range (0.9 – 17 μm), high thermal conductivity, and high laser-damage-threshold [2,3]. Here, we report the generation of broadly tunable mid-IR radiation across 12.65 – 15 μm based on the DFG approach using an OP-GaAs crystal.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttps://ieeexplore.ieee.org/document/8872716/
dc.relation.urlhttps://ieeexplore.ieee.org/document/8872716/
dc.relation.urlhttps://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8872716
dc.rights(c) 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.titleA 12.6 – 15 μm Mid-IR Source Based on Difference Frequency Generation in Orientation-Patterned GaAs
dc.typeConference Paper
dc.contributor.departmentChemical Kinetics & Laser Sensors Laboratory
dc.contributor.departmentClean Combustion Research Center
dc.contributor.departmentMechanical Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.conference.date23-27 June 2019
dc.conference.name2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
dc.conference.locationMunich, Germany
dc.eprint.versionPost-print
dc.contributor.institutionPolitecnico di Milano, Department of Physics and IFN-CNR, Via G. Previati 1/C, 23900 Lecco, Italy
kaust.personShakfa, Mohammad Khaled
kaust.personFarooq, Aamir
refterms.dateFOA2019-12-08T07:31:07Z
dc.date.published-online2019-10-17
dc.date.published-print2019-06


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