A 12.6 – 15 μm Mid-IR Source Based on Difference Frequency Generation in Orientation-Patterned GaAs

Abstract
Tunable laser sources in the mid-infrared (mid-IR) spectral range have been of great interest for a variety of applications such as molecular spectroscopy and trace gas detection. Difference-frequency generation (DFG) based on nonlinear frequency conversion in nonlinear crystals has been an effective approach to realize tunable mid-IR laser sources [1]. Among nonlinear crystals, orientation-patterned (OP) GaAs has been highly attractive for mid-IR DFG laser sources due to its large nonlinear susceptibility, lack of birefringence, wide transparency range (0.9 – 17 μm), high thermal conductivity, and high laser-damage-threshold [2,3]. Here, we report the generation of broadly tunable mid-IR radiation across 12.65 – 15 μm based on the DFG approach using an OP-GaAs crystal.

Citation
Shakfa, M. K., Lamperti, M., Gatti, D., Marangoni, M., & Farooq, A. (2019). A 12.6 – 15 μm Mid-IR Source Based on Difference Frequency Generation in Orientation-Patterned GaAs. 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). doi:10.1109/cleoe-eqec.2019.8872716

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Conference/Event Name
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

DOI
10.1109/CLEOE-EQEC.2019.8872716

Additional Links
https://ieeexplore.ieee.org/document/8872716/https://ieeexplore.ieee.org/document/8872716/https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8872716

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