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dc.contributor.authorChen, Aitian
dc.contributor.authorZhang, Senfu
dc.contributor.authorWen, Yan
dc.contributor.authorHuang, Haoliang
dc.contributor.authorKosel, Jürgen
dc.contributor.authorLu, Yalin
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2019-11-28T05:59:26Z
dc.date.available2019-11-28T05:59:26Z
dc.date.issued2019-11-18
dc.identifier.citationChen, A., Zhang, S., Wen, Y., Huang, H., Kosel, J., Lu, Y., & Zhang, X. (2019). Electric-Field-Enhanced Bulk Perpendicular Magnetic Anisotropy in GdFe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure. ACS Applied Materials & Interfaces. doi:10.1021/acsami.9b16904
dc.identifier.doi10.1021/acsami.9b16904
dc.identifier.urihttp://hdl.handle.net/10754/660296
dc.description.abstractPerpendicular magnetic anisotropy is important for increasing the information storage density in the perpendicular magnetic recording media, and for rare earth-transition metal alloys with bulk perpendicular magnetic anisotropy that generate great research interest due to their abundant interesting phenomena, such as fast domain wall motion and skyrmion. Here, we deposit amorphous GdFe ferrimagnetic films on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 ferroelectric substrate and investigate the effect of electric-field-induced piezostrain on its bulk perpendicular magnetic anisotropy. The anomalous Hall effect and polar Kerr image measurements suggest an enhanced bulk perpendicular magnetic anisotropy by electric field, which originates from a positive magnetoelastic anisotropy due to the positive magnetostriction coefficient of the GdFe film and the electric-field-induced tensile strain along the z axis in Pb(Mg1/3Nb2/3)0.7Ti0.3O3 ferroelectric substrate. Our results enrich the electrical control of perpendicular magnetic anisotropy and are useful for designing spintronic devices based on perpendicular magnetic anisotropy.
dc.description.sponsorshipThis work was supported by King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under Award No. CRF-2017-3427-CRG6. The authors acknowledge the Nanofabrication Core Lab at KAUST for the excellent assistance. The authors also acknowledge the partial support from the Bureau of Facility Support and Budget, CAS, and the Anhui Initiative in Quantum Information Technologies (AHY100000).
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsami.9b16904
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.9b16904.
dc.titleElectric-Field-Enhanced Bulk Perpendicular Magnetic Anisotropy in GdFe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSensing, Magnetism and Microsystems Lab
dc.identifier.journalACS Applied Materials & Interfaces
dc.rights.embargodate2020-11-18
dc.eprint.versionPost-print
dc.contributor.institutionAnhui Laboratory of Advanced Photon Science and Technology, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
kaust.personChen, Aitian
kaust.personZhang, Senfu
kaust.personWen, Yan
kaust.personKosel, Jürgen
kaust.personZhang, Xixiang
kaust.grant.numberCRF-2017-3427-CRG6
refterms.dateFOA2020-11-18T00:00:00Z
kaust.acknowledged.supportUnitNanofabrication Core Lab
kaust.acknowledged.supportUnitOffice of Sponsored Research (OSR)


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