Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/660095
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AbstractA systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is represented in this work. In all materials, both Curie temperature and magnetization decrease upon increasing the hole compensation, confirming the description of hole mediated ferromagnetism according to the p-d Zener model. The material dependence of Curie temperature and magnetization versus hole compensation reveals that the manipulation of magnetic properties in III-Mn-V dilute ferromagnetic semiconductors by ion irradiation is strongly influenced by the energy level location of the produced defect relative to the band edges in semiconductors.
CitationXu, C., Wang, M., Yuan, Y., Larkin, G., Helm, M., & Zhou, S. (2019). Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors. Journal of Physics D: Applied Physics, 52(35), 355301. doi:10.1088/1361-6463/ab25dd
SponsorsSupport by the Ion Beam Center (IBC) at HZDR is gratefully acknowledged. The authors thank Professor B L Gallagher, Dr K W Edmonds, Dr R P Campion and Dr A W Rushforth (University of Nottingham) for providing (Ga,Mn)As samples. The support from Rafal Jakiela (Polish Academy of Sciences) for SIMS measurement is acknowledged. This work is funded by the Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713). The author C Xu thanks financial support by Chinese Scholarship Council (File No. 201506680062)