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    AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device

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    Preprint file 1.pdf
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    Type
    Preprint
    Authors
    Lu, Yi cc
    Yao, Hsin-Hung
    Li, Jingtao
    Yan, Jianchang
    Wang, Junxi
    Li, Jinmin
    Li, Xiaohang cc
    KAUST Department
    King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    KAUST Grant Number
    BAS/1/1664-01-01
    URF/1/3437-01-01
    Date
    2019-01-16
    Permanent link to this record
    http://hdl.handle.net/10754/659984
    
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    Abstract
    Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been demonstrated to form high electron mobility transistor (HEMT) through delta-doping in the barrier due to its none-polar property. Following the development in III-V HEMT which turns from delta-doping-induced to polarization-induced 2DEG, an alternative method based on III-N materials/beta-Ga2O3 heterostructure is proposed that utilizing the polarization difference on the interface. Further requirements of electric field and conduction band difference show that only nitrogen (N)-polar AlN on beta-Ga2O3 can form the channel and hold large 2DEG concentration on the interface. Compared with conventional metal-polar AlN/GaN HEMT, the proposed N-polar AlN/beta-Ga2O3 HEMT show a much larger 2DEG concentration, the spontaneous-polarization-dominated electric field, better DC output performance, as well as higher breakdown voltage. This study provides a new research approach that shifting from delta-doping-induced to polarization-induced on beta-Ga2O3-based HEMT, which can also be a guideline for community excavating the application potential of Ga2O3.
    Sponsors
    The KAUST authors acknowledge the financial support from KAUST Baseline BAS/1/1664-01-01, KAUST CRG URF/1/3437-01-01, GCC REP/1/3189-01-01, and National Natural Science Foundation of China (Grant No.61774065). The work at Institute of Semiconductors, Chinese Academy of Sciences was supported by the National Key R&D Program of China (Nos. 2016YFB0400803 and 2016YFB0400802).
    Publisher
    arXiv
    arXiv
    1901.05111
    Additional Links
    https://arxiv.org/pdf/1901.05111
    Collections
    Preprints; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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