AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device
Type
PreprintKAUST Department
King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi ArabiaComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Grant Number
BAS/1/1664-01-01URF/1/3437-01-01
Date
2019-01-16Permanent link to this record
http://hdl.handle.net/10754/659984