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dc.contributor.authorPark, Mun Do
dc.contributor.authorMin, Jung Wook
dc.contributor.authorLee, Jun Yeob
dc.contributor.authorHwang, Hyeong Yong
dc.contributor.authorKim, Cihyun
dc.contributor.authorKang, Seokjin
dc.contributor.authorKang, Chang Mo
dc.contributor.authorPark, Jeong Hwan
dc.contributor.authorJho, Young Dahl
dc.contributor.authorLee, Dong Seon
dc.date.accessioned2019-10-24T05:52:33Z
dc.date.available2019-10-24T05:52:33Z
dc.date.issued2019-09-10
dc.identifier.citationPark, M.-D., Min, J.-W., Lee, J.-Y., Hwang, H.-Y., Kim, C., Kang, S., … Lee, D.-S. (2019). Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 528, 125233. doi:10.1016/j.jcrysgro.2019.125233
dc.identifier.doi10.1016/j.jcrysgro.2019.125233
dc.identifier.urihttp://hdl.handle.net/10754/659081
dc.description.abstractNitrogen flow rate is one of the important growth parameters for the growth of group-III nitride nanowires in plasma-assisted molecular beam epitaxy. However, nitrogen flow rate has received less attention compared to the group-III metal fluxes since its effects are not as prominent as that of the metal fluxes. In this study, we investigated the effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires. Reducing the nitrogen flow rate improved the structural uniformity and increased the Al composition. We present a composition change model and show that excess nitrogen suppresses Ga desorption by recombining the Ga atoms, thereby causing a change in the composition of AlGaN. It was confirmed that the influence of the nitrogen flow rate on the Al composition varied with the growth temperature. These results provide insights into the role of nitrogen flow rate on the growth of AlGaN nanowires and suggest that more sophisticated growth control is possible by considering the nitrogen flow rate.
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. NRF-2017R1A2B2011858); Gwangju institute of science technology (GIST) also funded this experiment through Amano Center for Advanced LEDs.
dc.publisherElsevier BV
dc.relation.urlhttps://linkinghub.elsevier.com/retrieve/pii/S0022024819304488
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Crystal Growth, [[Volume], [Issue], (2019-09-10)] DOI: 10.1016/j.jcrysgro.2019.125233 . © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectA1. Nanostructures
dc.subjectA1. Growth models
dc.subjectA1. Characterization
dc.subjectA3. Molecular beam epitaxy
dc.subjectB1. Nitrides
dc.subjectB2. Semiconducting III-V materials
dc.titleEffects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy
dc.typeArticle
dc.contributor.departmentPhotonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
dc.identifier.journalJournal of Crystal Growth
dc.rights.embargodate2021-09-10
dc.eprint.versionPost-print
dc.contributor.institutionSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
dc.contributor.institutionSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
kaust.personMin, Jung Wook
refterms.dateFOA2020-09-29T10:40:41Z
dc.date.published-online2019-09-10
dc.date.published-print2019-12


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