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    Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy

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    Type
    Article
    Authors
    Park, Mun Do cc
    Min, Jung Wook
    Lee, Jun Yeob
    Hwang, Hyeong Yong
    Kim, Cihyun
    Kang, Seokjin
    Kang, Chang Mo
    Park, Jeong Hwan
    Jho, Young Dahl
    Lee, Dong Seon
    KAUST Department
    Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
    Date
    2019-09-10
    Online Publication Date
    2019-09-10
    Print Publication Date
    2019-12
    Embargo End Date
    2021-09-10
    Permanent link to this record
    http://hdl.handle.net/10754/659081
    
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    Abstract
    Nitrogen flow rate is one of the important growth parameters for the growth of group-III nitride nanowires in plasma-assisted molecular beam epitaxy. However, nitrogen flow rate has received less attention compared to the group-III metal fluxes since its effects are not as prominent as that of the metal fluxes. In this study, we investigated the effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires. Reducing the nitrogen flow rate improved the structural uniformity and increased the Al composition. We present a composition change model and show that excess nitrogen suppresses Ga desorption by recombining the Ga atoms, thereby causing a change in the composition of AlGaN. It was confirmed that the influence of the nitrogen flow rate on the Al composition varied with the growth temperature. These results provide insights into the role of nitrogen flow rate on the growth of AlGaN nanowires and suggest that more sophisticated growth control is possible by considering the nitrogen flow rate.
    Citation
    Park, M.-D., Min, J.-W., Lee, J.-Y., Hwang, H.-Y., Kim, C., Kang, S., … Lee, D.-S. (2019). Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 528, 125233. doi:10.1016/j.jcrysgro.2019.125233
    Sponsors
    This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. NRF-2017R1A2B2011858); Gwangju institute of science technology (GIST) also funded this experiment through Amano Center for Advanced LEDs.
    Publisher
    Elsevier BV
    Journal
    Journal of Crystal Growth
    DOI
    10.1016/j.jcrysgro.2019.125233
    Additional Links
    https://linkinghub.elsevier.com/retrieve/pii/S0022024819304488
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.jcrysgro.2019.125233
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