Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy
Type
ArticleAuthors
Park, Mun Do
Min, Jung Wook
Lee, Jun Yeob
Hwang, Hyeong Yong
Kim, Cihyun
Kang, Seokjin
Kang, Chang Mo
Park, Jeong Hwan
Jho, Young Dahl
Lee, Dong Seon
KAUST Department
Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi ArabiaDate
2019-09-10Online Publication Date
2019-09-10Print Publication Date
2019-12Embargo End Date
2021-09-10Permanent link to this record
http://hdl.handle.net/10754/659081
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Show full item recordAbstract
Nitrogen flow rate is one of the important growth parameters for the growth of group-III nitride nanowires in plasma-assisted molecular beam epitaxy. However, nitrogen flow rate has received less attention compared to the group-III metal fluxes since its effects are not as prominent as that of the metal fluxes. In this study, we investigated the effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires. Reducing the nitrogen flow rate improved the structural uniformity and increased the Al composition. We present a composition change model and show that excess nitrogen suppresses Ga desorption by recombining the Ga atoms, thereby causing a change in the composition of AlGaN. It was confirmed that the influence of the nitrogen flow rate on the Al composition varied with the growth temperature. These results provide insights into the role of nitrogen flow rate on the growth of AlGaN nanowires and suggest that more sophisticated growth control is possible by considering the nitrogen flow rate.Citation
Park, M.-D., Min, J.-W., Lee, J.-Y., Hwang, H.-Y., Kim, C., Kang, S., … Lee, D.-S. (2019). Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 528, 125233. doi:10.1016/j.jcrysgro.2019.125233Sponsors
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. NRF-2017R1A2B2011858); Gwangju institute of science technology (GIST) also funded this experiment through Amano Center for Advanced LEDs.Publisher
Elsevier BVJournal
Journal of Crystal GrowthAdditional Links
https://linkinghub.elsevier.com/retrieve/pii/S0022024819304488ae974a485f413a2113503eed53cd6c53
10.1016/j.jcrysgro.2019.125233