Show simple item record

dc.contributor.authorBotey, Muriel
dc.contributor.authorAhmed, Waqas Waseem
dc.contributor.authorMedina, Judit
dc.contributor.authorHerrero, Ramon
dc.contributor.authorStaliunas, Kestutis
dc.date.accessioned2019-10-20T08:09:16Z
dc.date.available2019-10-20T08:09:16Z
dc.date.issued2019-09-20
dc.identifier.citationBotey, M., Ahmed, W. W., Medina, J., Herrero, R., & Staliunas, K. (2019). Non-Hermitian Broad Aperture Semiconductor Lasers Based on PT-Symmetry. 2019 21st International Conference on Transparent Optical Networks (ICTON). doi:10.1109/icton.2019.8840291
dc.identifier.doi10.1109/icton.2019.8840291
dc.identifier.urihttp://hdl.handle.net/10754/658664
dc.description.abstractIn this paper we propose a novel configuration to regularize the complex spatiotemporal dynamics of broad area lasers into bright light beam. It has recently been shown that arbitrary non-Hermitian optical potentials based on local Parity-Time (PT-) symmetry may tailor and control the flow of light, due to the asymmetric mode coupling. We now provide a comprehensive analysis on how this can be applied to stabilize the emission from broad aperture semiconductor lasers. The mechanism relies on a non-Hermitian configuration of the laser potential achieved by simultaneous spatial modulation of the refractive index and gain-loss profiles. This allows concentrating the light into a bright and narrow output beam. We provide a numerical analysis on Vertical Cavity Surface Emitting lasers and Broad Area Semiconductor Lasers. The results indicate a significant intensity enhancement and concentration of the emitted stabilized beam. The proposed mechanism may be technologically achievable, and it is expected to be applicable to regularize the radiation of other broad aperture and microlasers, which typically emit quite random and irregular light patterns. Besides, the reported concentration effect is universal, and could be extended to random and quasi-periodic background potentials.
dc.description.sponsorshipKing Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR-2016- CRG5-2950); KAUST Baseline Research Fund (BAS/1/1626-01-01); Spanish Ministerio de Economía y Competitividad (FIS2015-65998-C2-1-P); European Union Horizon 2020 Framework EUROSTARS (E10524 HIP-Laser).
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttps://ieeexplore.ieee.org/document/8840291/
dc.subjectnon-Hermiticity
dc.subjectsemiconductor lasers
dc.subjectlocal PT-symmetry
dc.subjectVCSEL
dc.titleNon-Hermitian Broad Aperture Semiconductor Lasers Based on PT-Symmetry
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.conference.date2019-07-09 to 2019-07-13
dc.conference.name21st International Conference on Transparent Optical Networks, ICTON 2019
dc.conference.locationAngers, FRA
dc.eprint.versionPost-print
dc.contributor.institutionDepartament de Física, Universitat Politècnica de Catalunya, Catalonia
dc.contributor.institutionInstitució Catalana de Reserca i Estudis Avaņats (ICREA), Catalonia
kaust.personAhmed, Waqas Waseem
kaust.grant.numberBAS/1/1626-01-01
kaust.acknowledged.supportUnitOffice of Sponsored Research
kaust.acknowledged.supportUnitOSR
dc.date.published-online2019-09-20
dc.date.published-print2019-07


This item appears in the following Collection(s)

Show simple item record