p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant NumberOSR-2017-CRG6-3427
Permanent link to this recordhttp://hdl.handle.net/10754/658624
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AbstractIn the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The samples present a phase transition from ferromagnetism to paramagnetism upon increasing hole concentration. In the intermediate regime, we observe a signature of antiferromagnetism. By using channeling Rutherford backscattering spectrometry and particle-induced x-ray emission, the substitutional Mn atoms are observed to shift to interstitial sites, while more Zn atoms occupy Ga sites, which explains the observed behavior. This is also consistent with first-principles calculations, showing that the complex of substitutional Zn and interstitial Mn has the lowest formation energy.
CitationXu, C., Zhang, C., Wang, M., Xie, Y., Hübner, R., Heller, R., … Zhou, S. (2019). p -type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties. Physical Review Materials, 3(8). doi:10.1103/physrevmaterials.3.084604
SponsorsThis research used the resources of Shaheen II at King Abdullah University of Science & Technology (KAUST) in Thuwal, Saudi Arabia. Support by the Ion Beam Center (IBC) at HZDR is gratefully acknowledged. This work is funded by the Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713). C.Z., Y.Y., and X.Z. acknowledge the support from King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR), under Award No. OSR-2017-CRG6-3427. C.X. acknowledges financial support by the Chinese Scholarship Council (File No. 201506680062).
PublisherAmerican Physical Society (APS)
JournalPhysical Review Materials