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Anthopoulos_N&V Nat. Mater. 2019.pdf
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Type
ArticleAuthors
Anthopoulos, Thomas D.
KAUST Department
KAUST Solar Center (KSC)Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2019-09-19Online Publication Date
2019-09-19Print Publication Date
2019-10Embargo End Date
2020-03-19Permanent link to this record
http://hdl.handle.net/10754/658598
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Show full item recordAbstract
Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.Citation
Anthopoulos, T. D. (2019). Ultrathin channels make transistors go faster. Nature Materials, 18(10), 1033–1034. doi:10.1038/s41563-019-0489-yPublisher
Springer NatureJournal
Nature MaterialsAdditional Links
http://www.nature.com/articles/s41563-019-0489-yae974a485f413a2113503eed53cd6c53
10.1038/s41563-019-0489-y