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    All-Oxide Thin Film Transistors and Rectifiers Enabling On-Chip Capacitive Energy Storage

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    Type
    Article
    Authors
    Wang,Zhenwei
    Alshammari, Fwzah Hamud
    Omran, Hesham
    Hota, Mrinal Kanti cc
    Al-Jawhari, Hala A.
    Salama, Khaled N. cc
    Alshareef, Husam N. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Functional Nanomaterials and Devices Research Group
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Sensors Lab
    Date
    2019-09-08
    Embargo End Date
    2020-01-01
    Permanent link to this record
    http://hdl.handle.net/10754/656848
    
    Metadata
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    Abstract
    All-oxide, fully-transparent thin film transistors and rectifiers, processed entirely by atomic layer deposition, have been developed for on-chip capacitive energy storage. Fully depleted thin film transistor (TFT) operation is achieved by optimizing the carrier concentration in the ZnO channels. The TFTs show an average saturation mobility of 10.5 cm2 V−1 s−1, a stable positive turn-on voltage of 0.88 V, a low subthreshold swing of 0.162 V dec−1, and the entire device achieves an overall transmittance of 85%. The field-effect rectifiers (FER) are fabricated based on short-circuiting the gate and drain electrodes of the TFT structure. Rectification ratio of 3.5 × 106 is achieved in DC measurements. Under AC input, the rectifiers can steadily operate at an input frequency up to 10 MHz and amplitude (peak to peak) up to 20 V. The rectifier can be used for signal processing applications with frequency up to 1 MHz. The energy storage utility of the rectifiers is demonstrated by rectifying AC input signals and successfully charging home-made electrochemical on-chip microsupercapacitors. The results demonstrate that integrated, all-oxide thin film rectifiers can be used for on-chip capacitive energy storage.
    Citation
    Wang, Z., Alshammari, F. H., Omran, H., Hota, M. K., Al-Jawhari, H. A., Salama, K. N., & Alshareef, H. N. (2019). All-Oxide Thin Film Transistors and Rectifiers Enabling On-Chip Capacitive Energy Storage. Advanced Electronic Materials, 5(12), 1900531. doi:10.1002/aelm.201900531
    Sponsors
    The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).
    Funding: King Abdullah University of Science and Technology
    Publisher
    Wiley
    Journal
    Advanced Electronic Materials
    DOI
    10.1002/aelm.201900531
    Additional Links
    https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201900531
    ae974a485f413a2113503eed53cd6c53
    10.1002/aelm.201900531
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Sensors Lab; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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