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    Photo-carrier extraction by triboelectricity for carrier transport layer-free photodetectors

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    Type
    Article
    Authors
    Hsiao, Vincent K.S.
    Leung, Siu Fung
    Hsiao, Yung Chi
    Kung, Po Kai
    Lai, Ying Chih
    Lin, Zong Hong
    Salama, Khaled N. cc
    Alshareef, Husam N. cc
    Wang, Zhong Lin
    He, Jr-Hau cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Functional Nanomaterials and Devices Research Group
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Nano Energy Lab
    Physical Science and Engineering (PSE) Division
    Sensors Lab
    KAUST Grant Number
    FCC/1/3079-08-01
    OSR-2016-CRG5-3005
    Date
    2019-08-02
    Online Publication Date
    2019-08-02
    Print Publication Date
    2019-11
    Embargo End Date
    2021-08-02
    Permanent link to this record
    http://hdl.handle.net/10754/656738
    
    Metadata
    Show full item record
    Abstract
    Efficient carrier extraction is essential for high performance optoelectronic devices, such as solar cells and photodetectors. Conventional strategies to separate photogenerated carriers typically involve the fabrication of a p-n junction by doping and the use of carrier selective charge transport layers. However, these techniques often require high temperature processes or costly materials. In this work, we demonstrate an innovative and simple approach of extracting photogenerated carriers from organometallic halide perovskites utilizing triboelectricity. The triboelectric device can be easily fabricated at low temperature using inexpensive materials on plastic substrates, enabling it to be readily integrated into self-powered optoelectronic devices. As a proof-of-concept, we fabricated a triboelectrics-assisted perovskite photodetector, which enabled us to study the surface charges generated using different electrical contacts and bending conditions performed by the device. With the assistance of a triboelectric charge-induced electric field, the photocurrent and transient photoresponses were significantly enhanced. Furthermore, we integrated the plastic triboelectric device with a flexible photodetector to demonstrate this carrier collection approach in flexible/wearable electronics. To the best of our knowledge, this work is the first report of carrier extraction in organometallic halide perovskite photodetector by triboelectric charges, demonstrating a potential use for carrier extraction in other semiconductor-based optoeletronic devices.
    Citation
    Hsiao, V. K. S., Leung, S.-F., Hsiao, Y.-C., Kung, P.-K., Lai, Y.-C., Lin, Z.-H., … He, J.-H. (2019). Photo-carrier extraction by triboelectricity for carrier transport layer-free photodetectors. Nano Energy, 65, 103958. doi:10.1016/j.nanoen.2019.103958
    Sponsors
    This work was financially supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) (OSR-2016-CRG5-3005), KAUST solar center (FCC/1/3079-08-01), KAUST Sensor Initiative, KAUST baseline funding, and the Ministry of Science and Technology (MOST), Taiwan, under project number MOST-107-2221-E-260-016-MY3.gs5
    Publisher
    Elsevier Ltd
    Journal
    Nano Energy
    DOI
    10.1016/j.nanoen.2019.103958
    Additional Links
    https://linkinghub.elsevier.com/retrieve/pii/S2211285519306652
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.nanoen.2019.103958
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Material Science and Engineering Program; Sensors Lab; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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