Photo-carrier extraction by triboelectricity for carrier transport layer-free photodetectors
Type
ArticleAuthors
Hsiao, Vincent K.S.Leung, Siu Fung
Hsiao, Yung Chi
Kung, Po Kai
Lai, Ying Chih
Lin, Zong Hong
Salama, Khaled N.

Alshareef, Husam N.

Wang, Zhong Lin
He, Jr-Hau

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Functional Nanomaterials and Devices Research Group
KAUST Solar Center (KSC)
Material Science and Engineering Program
Nano Energy Lab
Physical Science and Engineering (PSE) Division
Sensors Lab
KAUST Grant Number
FCC/1/3079-08-01OSR-2016-CRG5-3005
Date
2019-08-02Online Publication Date
2019-08-02Print Publication Date
2019-11Embargo End Date
2021-08-02Permanent link to this record
http://hdl.handle.net/10754/656738
Metadata
Show full item recordAbstract
Efficient carrier extraction is essential for high performance optoelectronic devices, such as solar cells and photodetectors. Conventional strategies to separate photogenerated carriers typically involve the fabrication of a p-n junction by doping and the use of carrier selective charge transport layers. However, these techniques often require high temperature processes or costly materials. In this work, we demonstrate an innovative and simple approach of extracting photogenerated carriers from organometallic halide perovskites utilizing triboelectricity. The triboelectric device can be easily fabricated at low temperature using inexpensive materials on plastic substrates, enabling it to be readily integrated into self-powered optoelectronic devices. As a proof-of-concept, we fabricated a triboelectrics-assisted perovskite photodetector, which enabled us to study the surface charges generated using different electrical contacts and bending conditions performed by the device. With the assistance of a triboelectric charge-induced electric field, the photocurrent and transient photoresponses were significantly enhanced. Furthermore, we integrated the plastic triboelectric device with a flexible photodetector to demonstrate this carrier collection approach in flexible/wearable electronics. To the best of our knowledge, this work is the first report of carrier extraction in organometallic halide perovskite photodetector by triboelectric charges, demonstrating a potential use for carrier extraction in other semiconductor-based optoeletronic devices.Citation
Hsiao, V. K. S., Leung, S.-F., Hsiao, Y.-C., Kung, P.-K., Lai, Y.-C., Lin, Z.-H., … He, J.-H. (2019). Photo-carrier extraction by triboelectricity for carrier transport layer-free photodetectors. Nano Energy, 65, 103958. doi:10.1016/j.nanoen.2019.103958Sponsors
This work was financially supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) (OSR-2016-CRG5-3005), KAUST solar center (FCC/1/3079-08-01), KAUST Sensor Initiative, KAUST baseline funding, and the Ministry of Science and Technology (MOST), Taiwan, under project number MOST-107-2221-E-260-016-MY3.gs5Publisher
Elsevier BVJournal
Nano EnergyAdditional Links
https://linkinghub.elsevier.com/retrieve/pii/S2211285519306652ae974a485f413a2113503eed53cd6c53
10.1016/j.nanoen.2019.103958