Alaie, Seyedhamidreza; Ghasemi Baboly, Mohammadhosein; Jiang, Ying Bing; Rempe, Susan B.; Anjum, Dalaver H.; Chaieb, Saharoui; Donovan, Brian Francis; Giri, Ashutosh; Szwejkowski, Chester J; Gaskins, John Thomas; Elahi, Mirza; Goettler, Drew; Braun, Jeffrey L.; Hopkins, Patrick E.; Leseman, Zayd Chad(ACS Applied Materials & Interfaces, American Chemical Society (ACS), 2018-10-03)[Article]
Focused Ion Beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however are not well understood, nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.
Biausque, Gregory; Laveille, Paco; Anjum, Dalaver H.; Zhang, Bei; Zhang, Xixiang; Caps, Valerie; Basset, Jean-Marie(ACS Applied Materials & Interfaces, American Chemical Society (ACS), 2017-08-16)[Article]
Bimetallic nanoparticles have been the subject of numerous research studies in the nanotechnology field, in particular for catalytic applications. Control of the size, morphology, and composition has become a key challenge due to the relationship between these parameters and the catalytic behavior of the particles in terms of activity, selectivity, and stability. Here, we present a one-pot air synthesis of 2 nm NiPt nanoparticles with a narrow size distribution. Control of the size and composition of the alloy particles is achieved at ambient temperature, in the aqueous phase, by the simultaneous reduction of nickel and platinum precursors with hydrazine, using a reverse microemulsion system. After deposition on an alumina support, this Ni-rich nanoalloy exhibits unprecedented stability under the harsh conditions of methane dry reforming.
Hu, Weijin; Wang, Zhihong; Du, Yuanmin; Zhang, Xixiang; Wu, Tao(ACS Applied Materials & Interfaces, American Chemical Society (ACS), 2014-10-16)[Article]
We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.
Sun, Jingya; Yang, Yang; Khan, Jafar I.; Alarousu, Erkki; Guo, Zaibing; Zhang, Xixiang; Zhang, Qiang; Mohammed, Omar F.(ACS Applied Materials & Interfaces, American Chemical Society (ACS), 2014-06-23)[Article]
We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.
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