We investigated the mechanism(s) of the anomalous Hall effect (AHE) in magnetic granular materials by fabricating 100-nm-thick thin films of Co<i><sub>x</sub></i>(MgO)<sub>100-<i>x</i></sub> with a Co volume fraction of 34≤<i>x</i>≤100 using co-sputtering at room temperature. We measured the temperature dependence of longitudinal resistivity (<i>ρ<sub>xx</sub></i>) and anomalous Hall resistivity (<i>ρ</i><sub>AHE</sub>) from 5 K to 300 K in all samples. We found that when <i>x</i> decreases from 100 to 34, the values of <i>ρ<sub>xx</sub></i> and <i>ρ</i><sub>AHE</sub> respectively increased by about four and three orders in magnitude. By linearly fitting the data, obtained at 5 K, of anomalous Hall coefficient (<i>R<sub>s</sub></i>) and of <i>ρ<sub>xx</sub></i> to log(<i>R<sub>s</sub></i>)~<i>γ</i>log(<i>ρ<sub>xx</sub></i>), we found that our results perfectly fell on a straight line with a slope of <i>γ</i>= 0.97±0.02. This fitting value of <i>γ</i> in <i>R<sub>s</sub></i>∝<i>ρ<sub>xx</sub></i><i><sup>γ</sup></i> clearly suggests that skew scattering dominated the AHE in this granular system. To explore the effect of the scattering on the AHE, we performed the same measurements on annealed samples. We found that although both <i>ρ<sub>xx</sub></i> and <i>ρ</i><sub>AHE</sub> significantly reduced after annealing, the correlation between them was almost the same, which was confirmed by the fitted value, <i>γ</i>=0.99±0.03. These data strongly suggest that the AHE originates from the skew scattering in Co-MgO granular thin films no matter how strong the scatterings of electrons by the interfaces and defects is. This observation may be of importance to the development of spintronic devices based on MgO.
Zhang, Xuan; Zheng, Xiujun; Zhang, Hong; Zhang, Junli; Fu, Jiecai; Zhang, Qiang; Peng, Chaoyi; Bai, Feiming; Zhang, Xixiang; Peng, Yong(J. Mater. Chem. C, Royal Society of Chemistry (RSC), 2017-08-10)[Article]
Here we demonstrate that the building blocks of semiconductor WO3 nanowires can be controllably soldered together by a novel nano-soldering technique of in situ SEM-FIB thermal soldering, in which the soldering temperature can precisely remain in an optimal range to avoid a strong thermal diffusion.
Three-dimensional (3D) in vitro scaffolds that mimic the irregular fibrous structures of in vivo extracellular matrix (ECM) are critical for many important biological applications. However, structural properties modulation of fibrous 3D scaffolds remains a challenge. Here, we report the first highly modulable 3D fibrous scaffolds self-assembled by high-aspect-ratio (HAR) microfibers. The scaffolds structural properties can be easily tailored to incorporate various physical cues, including geometry, stiffness, heterogeneity and nanotopography. Moreover, the fibrous scaffolds are readily and accurately patterned on desired locations of the substrate. Cell culture exhibits that our scaffolds can elicit strong bidirectional cell-material interactions. Furthermore, a functional disparity between the two-dimensional substrate and our 3D scaffolds is identified by cell spreading and proliferation data. These results prove the potential of the proposed scaffold as a biomimetic extracellular microenvironment for cell study.
Hamdan, Ahmad; AbdulHalim, Rasha; Anjum, Dalaver H.; Cha, Min Suk(Plasma Processes and Polymers, Wiley, 2017-07-25)[Article]
Nanoparticles have unique properties and are useful in many applications. Efficient synthesis of high yields of nanoparticles remains a challenge. Here, we synthesized SiOC:H, a low-dielectric-constant material, by electrical discharge at the interface of hexamethyldisilazane and water. The nanoparticle production rate of our technique was ∼17 mg per minute. We used Fourier transform infrared spectroscopy, scanning and transmission electron microscopy, and X-ray photoemission spectroscopy to characterize the synthesized material. Heating the nanoparticles to 500 °C for 2 h released hydrogen from CHx groups and evaporated volatile compounds. Our method to produce high yields of low-dielectric-constant nanoparticles for microelectronic applications is promising.
Biausque, Gregory; Laveille, Paco; Anjum, Dalaver H.; Zhang, Bei; Zhang, Xixiang; Caps, Valerie; Basset, Jean-Marie(ACS Applied Materials & Interfaces, American Chemical Society (ACS), 2017-08-16)[Article]
Bimetallic nanoparticles have been the subject of numerous research studies in the nanotechnology field, in particular for catalytic applications. Control of the size, morphology, and composition has become a key challenge due to the relationship between these parameters and the catalytic behavior of the particles in terms of activity, selectivity, and stability. Here, we present a one-pot air synthesis of 2 nm NiPt nanoparticles with a narrow size distribution. Control of the size and composition of the alloy particles is achieved at ambient temperature, in the aqueous phase, by the simultaneous reduction of nickel and platinum precursors with hydrazine, using a reverse microemulsion system. After deposition on an alumina support, this Ni-rich nanoalloy exhibits unprecedented stability under the harsh conditions of methane dry reforming.
Persistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of optoelectronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-ray-induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.
Liu, Xiang; Mi, Wenbo; Zhang, Qiang; Zhang, Xixiang(Physical Review B, American Physical Society (APS), 2017-12-26)[Article]
The anisotropic magnetoresistance (AMR) near the Verwey temperature (T-V) is investigated in charge ordered Fe3O4 epitaxial films. When the temperature continuously decreases below T-V, the symmetry of AMR in Fe3O4(100) film evolves from twofold to fourfold at a magnetic field of 50 kOe, where the magnetic field is parallel to the film surface, whereas AMR in Fe3O4(111) film maintains twofold symmetry. By analyzing AMR below T-V, it is found that the Verwey transition contains two steps, including a fast charge ordering process and a continuous formation process of trimeron, which is comfirmed by the temperature-dependent Raman spectra. Just below T-V, the twofold AMR in Fe3O4(100) film originates from uniaxial magnetic anisotropy. The fourfold AMR at a lower temperature can be ascribed to the in-plane trimerons. By comparing the AMR in the films with two orientations, it is found that the trimeron shows a smaller resistivity in a parallel magnetic field. The field-dependent AMR results show that the trimeron-sensitive field has a minimum threshold of about 2 kOe.
Membranes are prepared by self-assembly and casting of 5 and 13 wt% poly(styrene-b-butadiene-b-styrene) (PS-b-PB-b-PS) copolymers solutions in different solvents, followed by immersion in water or ethanol. By controlling the solution-casting gap, porous films of 50 and 1 µm thickness are obtained. A gradient of increasing pore size is generated as the distance from the surface increased. An ordered porous surface layer with continuous nanochannels can be observed. Its formation is investigated, by using time-resolved grazing incident small angle X-ray scattering, electron microscopy, and rheology, suggesting a strong effect of the air-solution interface on the morphology formation. The thin PS-b-PB-b-PS ordered films are modified, by promoting the photolytic addition of thioglycolic acid to the polybutadiene groups, adding chemical functionality and specific transport characteristics on the preformed nanochannels, without sacrificing the membrane morphology. Photomodification increases fivefold the water permeance to around 2 L m(-2) h(-1) bar(-1) , compared to that of the unmodified one. A rejection of 74% is measured for methyl orange in water. The membranes fabrication with tailored nanochannels and chemical functionalities can be demonstrated using relatively lower cost block copolymers. Casting on porous polyacrylonitrile supports makes the membranes even more scalable and competitive in large scale.
Zhang, Bo; Zheng, Tao; Sun, Ce; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Quevedo-Lopez, Manuel A.; Gnade, Bruce E.(Journal of Alloys and Compounds, Elsevier BV, 2017-05-22)[Article]
Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.
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