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dc.contributor.advisorAnthopoulos, Thomas D.
dc.contributor.authorFelemban, Zainab
dc.date.accessioned2019-08-22T06:29:46Z
dc.date.available2019-08-22T06:29:46Z
dc.date.issued2019-08-18
dc.identifier.doi10.25781/KAUST-G5Z86
dc.identifier.urihttp://hdl.handle.net/10754/656578
dc.description.abstractFabrication process of capacitors and Schottky diodes with nanogap electrodes is explained in this Thesis. The Schottky diode is made with IGZO in the nanogap, whereas the capacitor is made with ZrO2 in the nanogap which acts as the dielectric. Moreover, the electric characterization of both the diode and capacitor was obtained for different frequencies and different diameters. The end result showed that as the frequency increases the diode performance increases, but the capacitance of the capacitors decreases. Also, the barrier height and concentration were obtained using the Mott-Schottky plot for different frequencies. The 10MHz had the highest carrier concentration (5.9E+18cm-3) and barrier height (1V).
dc.language.isoen
dc.subjectNanogap
dc.subjectDiode
dc.subjectCapacitor
dc.subjectNanoelectronics
dc.subjectRF
dc.subjectEnergy Harvesting
dc.titleDevelopment of Solution Processed Co-planar Nanogap Capacitors and Diodes for RF Applications Enabled Via Adhesion Lithography
dc.typeThesis
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
thesis.degree.grantorKing Abdullah University of Science and Technology
dc.contributor.committeememberLaquai, Frédéric
dc.contributor.committeememberMcCulloch, Iain
thesis.degree.disciplineMaterials Science and Engineering
thesis.degree.nameMaster of Science
refterms.dateFOA2019-08-22T06:29:46Z
kaust.request.doiyes


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