Development of Solution Processed Co-planar Nanogap Capacitors and Diodes for RF Applications Enabled Via Adhesion Lithography
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Zainab Felemban - Thesis - Final Draft.pdf
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Zainab Felemban - Thesis - Final Draft
Type
ThesisAuthors
Felemban, Zainab
Advisors
Anthopoulos, Thomas D.
Committee members
Laquai, Frédéric
McCulloch, Iain

Program
Material Science and EngineeringKAUST Department
Physical Science and Engineering (PSE) DivisionDate
2019-08-18Permanent link to this record
http://hdl.handle.net/10754/656578
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Fabrication process of capacitors and Schottky diodes with nanogap electrodes is explained in this Thesis. The Schottky diode is made with IGZO in the nanogap, whereas the capacitor is made with ZrO2 in the nanogap which acts as the dielectric. Moreover, the electric characterization of both the diode and capacitor was obtained for different frequencies and different diameters. The end result showed that as the frequency increases the diode performance increases, but the capacitance of the capacitors decreases. Also, the barrier height and concentration were obtained using the Mott-Schottky plot for different frequencies. The 10MHz had the highest carrier concentration (5.9E+18cm-3) and barrier height (1V).Citation
Felemban, Z. (2019). Development of Solution Processed Co-planar Nanogap Capacitors and Diodes for RF Applications Enabled Via Adhesion Lithography. KAUST Research Repository. https://doi.org/10.25781/KAUST-G5Z86ae974a485f413a2113503eed53cd6c53
10.25781/KAUST-G5Z86