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    Development of Solution Processed Co-planar Nanogap Capacitors and Diodes for RF Applications Enabled Via Adhesion Lithography

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    Zainab Felemban - Thesis - Final Draft.pdf
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    Zainab Felemban - Thesis - Final Draft
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    Type
    Thesis
    Authors
    Felemban, Zainab cc
    Advisors
    Anthopoulos, Thomas D. cc
    Committee members
    Laquai, Frédéric cc
    McCulloch, Iain cc
    Program
    Material Science and Engineering
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2019-08-18
    Permanent link to this record
    http://hdl.handle.net/10754/656578
    
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    Abstract
    Fabrication process of capacitors and Schottky diodes with nanogap electrodes is explained in this Thesis. The Schottky diode is made with IGZO in the nanogap, whereas the capacitor is made with ZrO2 in the nanogap which acts as the dielectric. Moreover, the electric characterization of both the diode and capacitor was obtained for different frequencies and different diameters. The end result showed that as the frequency increases the diode performance increases, but the capacitance of the capacitors decreases. Also, the barrier height and concentration were obtained using the Mott-Schottky plot for different frequencies. The 10MHz had the highest carrier concentration (5.9E+18cm-3) and barrier height (1V).
    Citation
    Felemban, Z. (2019). Development of Solution Processed Co-planar Nanogap Capacitors and Diodes for RF Applications Enabled Via Adhesion Lithography. KAUST Research Repository. https://doi.org/10.25781/KAUST-G5Z86
    DOI
    10.25781/KAUST-G5Z86
    ae974a485f413a2113503eed53cd6c53
    10.25781/KAUST-G5Z86
    Scopus Count
    Collections
    Theses; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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