Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures
Roqan, Iman S.
KAUST DepartmentAdvanced Semiconductor Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Online Publication Date2019-08-13
Print Publication Date2019-08-20
Permanent link to this recordhttp://hdl.handle.net/10754/656564
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AbstractThe 2D band diagram comprising out-of-plane potentials has been ubiquitously utilized for III-nitride heterostructures. Here, we propose the 3D band diagram based on unambiguous evidences in luminescence and carrier dynamics for lateral polarity junction quantum wells: although electrons and holes are separated out-of-plane in quantum wells by polarization, different band diagram heights lead to secondary carrier injection in-plane, causing electrons to transport from the III- to N-polar domains to recombine with holes therein with large wavefunction overlap. We also show that utilization of the 3D band diagram can be extended to single-polarity structures to analyze carrier transport and dynamics, providing new dimensions for accurate optical device design.
CitationGuo, W., Mitra, S., Jiang, J., Xu, H., Sheikhi, M., Sun, H., … Ye, J. (2019). Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures. Optica, 6(8), 1058. doi:10.1364/optica.6.001058
SponsorsNational Key Research and Development Program of China (2016YFB0400802); National Natural Science Foundation of China (NSFC) (61574145, 61704176); Natural Science Foundation of Zhejiang Province (LY15F040003); KAUST Baseline (BAS/1/1664-01-01); KAUST CRG (URF/ 1/3437-01-01, URF/1/3771-01-01); KAUST GCC (REP/1/3189-01-01).
PublisherThe Optical Society