Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices
Hedhili, Mohamed N.
Almalawi, Dhaifallah R.
Alwadai, Norah M.
Jung, Gun Y.
Roqan, Iman S.
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
KAUST Grant NumberBAS/1/1319-01-01
Embargo End Date2020-08-08
Permanent link to this recordhttp://hdl.handle.net/10754/656556
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AbstractWide bandgap semiconductor (WBGS)-based deep UV (DUV) devices lag behind those operating in the visible and IR range, as no stable p-type WBGS that operates in the DUV region (<300 nm) presently exists. Here, solution-processed p-type manganese oxide WBGS quantum dots (MnO QDs) are explored. Highly crystalline MnO QDs are synthesized via femtosecond-laser ablation in liquid. The p-type nature of these QDs is demonstrated by Kelvin probe and field effect transistor measurements, along with density functional theory calculations. As proof of concept, a high-performance, self-powered, and solar-blind Schottky DUV photodetector based on such QDs is fabricated, which is capable of detecting under ambient conditions. The carrier collection efficiency is enhanced by asymmetric electrode structure, leading to high responsivity. This novel p-type MnO QD material can lead to cost-effective industrial production of high-performance solution-processed DUV optoelectronics for large-scale applications.
CitationMitra, S., Pak, Y., Alaal, N., Hedhili, M. N., Almalawi, D. R., Alwadai, N., … Roqan, I. S. (2019). Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices. Advanced Optical Materials, 1900801. doi:10.1002/adom.201900801
SponsorsS.M. and Y.P. contributed equally to this work. The authors acknowledge the support of Core lab facilities of the King Abdullah University of Science and Technology (KAUST) for TEM, FTIR, UV–vis, and XPS measurement. The authors thank KAUST for the finance support using the base fund number (BAS/1/1319-01-01). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST in Thuwal, Saudi Arabia. Authors thanks Dr. Sergei Lopatin form KAUST Core lab for assisting us in the TEM measurements. Authors acknowledge the support of Heno Hwang, scientific illustrators at KAUST for producing TOC image.
JournalAdvanced Optical Materials