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    Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature

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    Type
    Conference Paper
    Authors
    Majid, Mohammed Abdul cc
    Al-Jabr, Ahmad cc
    Elafandy, Rami T. cc
    Oubei, Hassan M. cc
    Anjum, Dalaver H.
    Shehata, Mohamed
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Electron Microscopy
    Photonics Laboratory
    Physical Science and Engineering (PSE) Division
    Date
    2019-03-01
    Online Publication Date
    2019-03-01
    Print Publication Date
    2019-03-01
    Permanent link to this record
    http://hdl.handle.net/10754/656517
    
    Metadata
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    Abstract
    In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as ~250meV was observed for samples capped with a single and bilayer of the dielectric film (1μm-SiO2 and 0.1μm-Si3N4) and annealed at a high temperature (700-1000oC) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of ~46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.
    Citation
    Abdul Majid, M., Al-Jabr, A., Anjum, D. H., Ng, T. K., Ooi, B. S., Elafandy, R. T., … Shehata, M. (2019). Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature. Novel In-Plane Semiconductor Lasers XVIII. doi:10.1117/12.2511878
    Sponsors
    The authors gratefully acknowledge the financial support from KACST Technology Innovation Center for Solid State Lighting at KAUST and Research Consultancy Institute (RCI) at Effat University.
    Publisher
    SPIE spie@spie.org
    Conference/Event name
    Novel In-Plane Semiconductor Lasers XVIII 2019
    DOI
    10.1117/12.2511878
    Additional Links
    https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10939/2511878/Large-intermixing-in-the-InGaP-InAlGaP-laser-structure-using-stress/10.1117/12.2511878.full
    ae974a485f413a2113503eed53cd6c53
    10.1117/12.2511878
    Scopus Count
    Collections
    Conference Papers; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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