Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature
AuthorsMajid, Mohammed Abdul
Elafandy, Rami T.
Oubei, Hassan M.
Anjum, Dalaver H.
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2019-03-01
Print Publication Date2019-03-01
Permanent link to this recordhttp://hdl.handle.net/10754/656517
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AbstractIn this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as ~250meV was observed for samples capped with a single and bilayer of the dielectric film (1μm-SiO2 and 0.1μm-Si3N4) and annealed at a high temperature (700-1000oC) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of ~46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.
CitationAbdul Majid, M., Al-Jabr, A., Anjum, D. H., Ng, T. K., Ooi, B. S., Elafandy, R. T., … Shehata, M. (2019). Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature. Novel In-Plane Semiconductor Lasers XVIII. doi:10.1117/12.2511878
SponsorsThe authors gratefully acknowledge the financial support from KACST Technology Innovation Center for Solid State Lighting at KAUST and Research Consultancy Institute (RCI) at Effat University.
Conference/Event nameNovel In-Plane Semiconductor Lasers XVIII 2019