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dc.contributor.authorHan, Ali
dc.contributor.authorAljarb, Areej
dc.contributor.authorLiu, Sheng
dc.contributor.authorLi, Peng
dc.contributor.authorMa, Chun
dc.contributor.authorXue, Fei
dc.contributor.authorLopatin, Sergei
dc.contributor.authorYang, Chih-Wen
dc.contributor.authorHuang, Jing-Kai
dc.contributor.authorWan, Yi
dc.contributor.authorZhang, Xixiang
dc.contributor.authorXiong, Qihua
dc.contributor.authorHuang, Kuo-Wei
dc.contributor.authorTung, Vincent
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorLi, Lain-Jong
dc.date.accessioned2019-08-19T08:05:29Z
dc.date.available2019-08-19T08:05:29Z
dc.date.issued2019
dc.identifier.citationHan, A., Aljarb, A., Liu, S., Li, P., Ma, C., Xue, F., … Li, L.-J. (2019). Growth of 2H stacked WSe2 bilayers on sapphire. Nanoscale Horizons. doi:10.1039/c9nh00260j
dc.identifier.doi10.1039/c9nh00260j
dc.identifier.urihttp://hdl.handle.net/10754/656499
dc.description.abstractBilayers of two-dimensional (2D) transition metal chalcogenides (TMDs) such as WSe2 have been attracting increasing attention owing to the intriguing properties involved in the different stacking configurations. The growth of bilayer WSe2 by chemical vapor deposition (CVD) has been facilely obtained without proper control of the stacking configuration. Herein, we report the controlled growth of bilayer WSe2 crystals as large as 30 μm on c-plane sapphire by the CVD method. Combining second harmonic generation (SHG), low-frequency Raman and scanning transmission electron microscopy (STEM), we elucidate the as-grown bilayer WSe2 with a 2H stacking configuration. Atomic force microscope (AFM) measurements reveal that the prominent atomic steps provide the energetically favorable templates to guide the upper layer nuclei formation, resembling the “graphoepitaxial effect” and facilitating the second WSe2 layer following the layer-by-layer growth mode to complete the bilayer growth. Field-effect charge transport measurement performed on bilayer WSe2 yields a hole mobility of up to 40 cm2 V−1 s−1, more than 3× higher than the value achieved in monolayer WSe2-based devices. Our study provides key insights into the growth mechanism of bilayer WSe2 crystals on sapphire and unlocks the opportunity for potential bilayer and multilayer TMD electronic applications.
dc.description.sponsorshipT. D. A., V. T., X. Z., and L. L. acknowledge the support from King Abdullah University of Science and Technology. V. T. acknowledges the support from User Proposals (#4420 and #5067) at the Molecular Foundry, Lawrence Berkeley National Lab, supported by the Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. We would also like to acknowledge the support from Core Lab in KAUST.
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://xlink.rsc.org/?DOI=C9NH00260J
dc.rightsArchived with thanks to Nanoscale Horizons
dc.titleGrowth of 2H stacked WSe2 bilayers on sapphire
dc.typeArticle
dc.contributor.departmentChemical Science Program
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentHomogeneous Catalysis Laboratory (HCL)
dc.contributor.departmentKAUST Catalysis Center (KCC)
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNanoscale Horizons
dc.eprint.versionPost-print
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore
dc.contributor.institutionSchool of Materials Science and Engineering, University of New South Wales, Sydney, Australia
dc.contributor.institutionMajuLab, CNRS-UNS-NUS-NTU International Joint Research Unit, UMI 3654, Singapore
dc.contributor.institutionNOVITAS, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
dc.contributor.institutionMolecular Foundry Division, Lawrence Berkeley National Lab, Berkeley 94720, USA
kaust.personHan, Ali
kaust.personAljarb, Areej
kaust.personLi, Peng
kaust.personMa, Chun
kaust.personXue, Fei
kaust.personLopatin, Sergei
kaust.personYang, Chih-Wen
kaust.personHuang, Jing-Kai
kaust.personWan, Yi
kaust.personZhang, Xixiang
kaust.personHuang, Kuo-Wei
kaust.personTung, Vincent
kaust.personAnthopoulos, Thomas D.
kaust.personLi, Lain-Jong
refterms.dateFOA2019-08-19T08:06:59Z


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