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    Growth of 2H stacked WSe2 bilayers on sapphire

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    Type
    Article
    Authors
    Han, Ali
    Aljarb, Areej
    Liu, Sheng
    Li, Peng cc
    Ma, Chun
    Xue, Fei
    Lopatin, Sergei cc
    Yang, Chih-Wen cc
    Huang, Jing-Kai
    Wan, Yi cc
    Zhang, Xixiang cc
    Xiong, Qihua
    Huang, Kuo-Wei cc
    Tung, Vincent cc
    Anthopoulos, Thomas D. cc
    Li, Lain-Jong cc
    KAUST Department
    Chemical Science Program
    Electron Microscopy
    Homogeneous Catalysis Laboratory (HCL)
    KAUST Catalysis Center (KCC)
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2019
    Permanent link to this record
    http://hdl.handle.net/10754/656499
    
    Metadata
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    Abstract
    Bilayers of two-dimensional (2D) transition metal chalcogenides (TMDs) such as WSe2 have been attracting increasing attention owing to the intriguing properties involved in the different stacking configurations. The growth of bilayer WSe2 by chemical vapor deposition (CVD) has been facilely obtained without proper control of the stacking configuration. Herein, we report the controlled growth of bilayer WSe2 crystals as large as 30 μm on c-plane sapphire by the CVD method. Combining second harmonic generation (SHG), low-frequency Raman and scanning transmission electron microscopy (STEM), we elucidate the as-grown bilayer WSe2 with a 2H stacking configuration. Atomic force microscope (AFM) measurements reveal that the prominent atomic steps provide the energetically favorable templates to guide the upper layer nuclei formation, resembling the “graphoepitaxial effect” and facilitating the second WSe2 layer following the layer-by-layer growth mode to complete the bilayer growth. Field-effect charge transport measurement performed on bilayer WSe2 yields a hole mobility of up to 40 cm2 V−1 s−1, more than 3× higher than the value achieved in monolayer WSe2-based devices. Our study provides key insights into the growth mechanism of bilayer WSe2 crystals on sapphire and unlocks the opportunity for potential bilayer and multilayer TMD electronic applications.
    Citation
    Han, A., Aljarb, A., Liu, S., Li, P., Ma, C., Xue, F., … Li, L.-J. (2019). Growth of 2H stacked WSe2 bilayers on sapphire. Nanoscale Horizons. doi:10.1039/c9nh00260j
    Sponsors
    T. D. A., V. T., X. Z., and L. L. acknowledge the support from King Abdullah University of Science and Technology. V. T. acknowledges the support from User Proposals (#4420 and #5067) at the Molecular Foundry, Lawrence Berkeley National Lab, supported by the Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. We would also like to acknowledge the support from Core Lab in KAUST.
    Publisher
    Royal Society of Chemistry (RSC)
    Journal
    Nanoscale Horizons
    DOI
    10.1039/c9nh00260j
    Additional Links
    http://xlink.rsc.org/?DOI=C9NH00260J
    ae974a485f413a2113503eed53cd6c53
    10.1039/c9nh00260j
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Chemical Science Program; Material Science and Engineering Program; KAUST Catalysis Center (KCC); KAUST Solar Center (KSC)

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