Name:
PhysRevApplied.11.054039.pdf
Size:
4.462Mb
Format:
PDF
Description:
Published version
Type
ArticleAuthors
Wang, MaoDebernardi, A.
Berencén, Y.
Heller, R.
Xu, Chi
Yuan, Ye
Xie, Yufang
Böttger, R.
Rebohle, L.
Skorupa, W.
Helm, M.
Prucnal, S.
Zhou, Shengqiang
KAUST Department
Physical Science and Engineering (PSE) DivisionDate
2019-05-14Permanent link to this record
http://hdl.handle.net/10754/656478
Metadata
Show full item recordAbstract
n-type doping in Si by shallow impurities, such as P, As, and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here, we demonstrate that doping Si with the deep chalcogen donor Te by nonequilibrium processing can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a nonsaturating carrier concentration as well as to an insulator-to-metal transition. First-principles calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide an alternative insight into the physics of deep impurities and lead to a possible solution for the ultrahigh electron concentration needed in today's Si-based nanoelectronics.Citation
Wang, M., Debernardi, A., Berencén, Y., Heller, R., Xu, C., Yuan, Y., … Zhou, S. (2019). Breaking the Doping Limit in Silicon by Deep Impurities. Physical Review Applied, 11(5). doi:10.1103/physrevapplied.11.054039Sponsors
Support by the Ion Beam Center (IBC) at HZDR is gratefully acknowledged. This work is funded by the Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713). M.W. acknowledges financial support by Chinese Scholarship Council (File No. 201506240060).Publisher
American Physical Society (APS)Journal
Physical Review AppliedAdditional Links
https://link.aps.org/doi/10.1103/PhysRevApplied.11.054039ae974a485f413a2113503eed53cd6c53
10.1103/PhysRevApplied.11.054039