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    Breaking the Doping Limit in Silicon by Deep Impurities

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    PhysRevApplied.11.054039.pdf
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    Type
    Article
    Authors
    Wang, Mao
    Debernardi, A.
    Berencén, Y.
    Heller, R.
    Xu, Chi
    Yuan, Ye
    Xie, Yufang
    Böttger, R.
    Rebohle, L.
    Skorupa, W.
    Helm, M.
    Prucnal, S.
    Zhou, Shengqiang
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2019-05-14
    Permanent link to this record
    http://hdl.handle.net/10754/656478
    
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    Abstract
    n-type doping in Si by shallow impurities, such as P, As, and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here, we demonstrate that doping Si with the deep chalcogen donor Te by nonequilibrium processing can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a nonsaturating carrier concentration as well as to an insulator-to-metal transition. First-principles calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide an alternative insight into the physics of deep impurities and lead to a possible solution for the ultrahigh electron concentration needed in today's Si-based nanoelectronics.
    Citation
    Wang, M., Debernardi, A., Berencén, Y., Heller, R., Xu, C., Yuan, Y., … Zhou, S. (2019). Breaking the Doping Limit in Silicon by Deep Impurities. Physical Review Applied, 11(5). doi:10.1103/physrevapplied.11.054039
    Sponsors
    Support by the Ion Beam Center (IBC) at HZDR is gratefully acknowledged. This work is funded by the Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713). M.W. acknowledges financial support by Chinese Scholarship Council (File No. 201506240060).
    Publisher
    American Physical Society (APS)
    Journal
    Physical Review Applied
    DOI
    10.1103/PhysRevApplied.11.054039
    Additional Links
    https://link.aps.org/doi/10.1103/PhysRevApplied.11.054039
    ae974a485f413a2113503eed53cd6c53
    10.1103/PhysRevApplied.11.054039
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division

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