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    Delicate Energy-Level Adjustment and Interfacial Defect Passivation of ZnO Electron Transport Layers in Organic Solar Cells by Constructing ZnO/In Nanojunctions

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    Type
    Article
    Authors
    Wang, Changhao
    Luo, Dongxu
    Gao, Yajun
    Wang, Ge
    Wang, Chen
    Ma, Pengfei
    Li, Huayang
    Wen, Shanpeng
    Dong, Wei
    Ruan, Shengping
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2019-06-10
    Online Publication Date
    2019-06-10
    Print Publication Date
    2019-07-11
    Embargo End Date
    2020-01-01
    Permanent link to this record
    http://hdl.handle.net/10754/656423
    
    Metadata
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    Abstract
    N-type metal oxides are popular electron transport materials and are always deposited onto the indium tin oxide electrode as the interfacial layer in bulk-heterojunction solar cells because of their excellent optical and electrical properties. Conventional metal oxides such as ZnO, however, not only suffer from the high work function (WF) which does not match the energy level of the acceptor component in the blend active layer but also introduce trap states as charge carrier recombination centers. To solve these disadvantages, the ZnO/In nanojunction was introduced as the interfacial modification layer, and by carefully controlling the thickness of the indium (In) film, we successfully suppressed carrier recombination by filling the trap states, facilitated carrier transport by decreasing the contact barrier potential, and maintained good carrier extraction at the electrodes. In addition, we also found In2O3 in the surface of the In metal, which participates in the charge transfer process by forming energy cascade because of its lower WF. Using this approach, solar cells exhibit better charge transport/recombination properties and enhanced carrier extraction abilities. The resulting device exhibits improved power conversion efficiencies of 9.84% than that of the control one (8.13%), which attributed to the improvement of interfacial properties, and demonstrates a feasible approach to increase the efficiency of organic photovoltaics.
    Citation
    Wang, C., Luo, D., Gao, Y., Wang, G., Wang, C., Ma, P., … Ruan, S. (2019). Delicate Energy-Level Adjustment and Interfacial Defect Passivation of ZnO Electron Transport Layers in Organic Solar Cells by Constructing ZnO/In Nanojunctions. The Journal of Physical Chemistry C, 123(27), 16546–16555. doi:10.1021/acs.jpcc.9b03776
    Sponsors
    This work was supported by the National Natural Science Foundation of China (grant nos. 11574110, 61874048, 11874348 and U1831113), the Project of Science and Technology Development Plan of Jilin Province (grant no. 20180414020GH), the Project of Jilin Provincial Development and Reform Commission (2018C040-2), Opened Fund of the State Key Laboratory on Applied Optics, and the China Postdoctoral Science Foundation (grant nos. 2014T70288 and 2013M541299).
    Publisher
    American Chemical Society (ACS)
    Journal
    Journal of Physical Chemistry C
    DOI
    10.1021/acs.jpcc.9b03776
    Additional Links
    http://pubs.acs.org/doi/10.1021/acs.jpcc.9b03776
    ae974a485f413a2113503eed53cd6c53
    10.1021/acs.jpcc.9b03776
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division

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