Show simple item record

dc.contributor.authorWang, Hanwen
dc.contributor.authorChen, Mao-Lin
dc.contributor.authorZhu, Mengjian
dc.contributor.authorWang, Yaning
dc.contributor.authorDong, Baojuan
dc.contributor.authorSun, Xingdan
dc.contributor.authorZhang, Xiaorong
dc.contributor.authorCao, Shimin
dc.contributor.authorLi, Xiaoxi
dc.contributor.authorHuang, Jianqi
dc.contributor.authorZhang, Lei
dc.contributor.authorLiu, Weilai
dc.contributor.authorSun, Dongming
dc.contributor.authorYe, Yu
dc.contributor.authorSong, Kepeng
dc.contributor.authorWang, Jianjian
dc.contributor.authorHan, Yu
dc.contributor.authorYang, Teng
dc.contributor.authorGuo, Huaihong
dc.contributor.authorQin, Chengbing
dc.contributor.authorXiao, Liantuan
dc.contributor.authorZhang, Jing
dc.contributor.authorChen, Jianhao
dc.contributor.authorHan, Zheng
dc.contributor.authorZhang, Zhidong
dc.date.accessioned2019-08-04T09:12:27Z
dc.date.available2019-08-04T09:12:27Z
dc.date.issued2019-05-24
dc.identifier.citationWang, H., Chen, M.-L., Zhu, M., Wang, Y., Dong, B., Sun, X., … Zhang, Z. (2019). Gate tunable giant anisotropic resistance in ultra-thin GaTe. Nature Communications, 10(1). doi:10.1038/s41467-019-10256-3
dc.identifier.doi10.1038/s41467-019-10256-3
dc.identifier.urihttp://hdl.handle.net/10754/656318
dc.description.abstractAnisotropy in crystals arises from different lattice periodicity along different crystallographic directions, and is usually more pronounced in two dimensional (2D) materials. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the recent research focuses. However, key understandings of the in-plane anisotropic resistance in low-symmetry 2D materials, as well as demonstrations of model devices taking advantage of it, have proven difficult. Here, we show that, in few-layered semiconducting GaTe, electrical conductivity anisotropy between x and y directions of the 2D crystal can be gate tuned from several fold to over 103. This effect is further demonstrated to yield an anisotropic non-volatile memory behavior in ultra-thin GaTe, when equipped with an architecture of van der Waals floating gate. Our findings of gate-tunable giant anisotropic resistance effect pave the way for potential applications in nanoelectronics such as multifunctional directional memories in the 2D limit.
dc.description.sponsorshipThis work is supported by the National Key R&D Program of China (2017YFA0206302), and is supported by the National Natural Science Foundation of China (NSFC) with Grant 11504385 and 51627801. T. Yang acknowledges supports from the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC, China (no. U1537204). L.T. Xiao acknowledges support from the National Key R&D Program of China (2017YFA0304203). H.H. Guo acknowledges NSFC Grant no. 51702146. Z. Han acknowledges the support from the Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices (no. KF201816).
dc.publisherSpringer Nature
dc.relation.urlhttp://www.nature.com/articles/s41467-019-10256-3
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/.
dc.titleGate tunable giant anisotropic resistance in ultra-thin GaTe
dc.typeArticle
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Center
dc.contributor.departmentChemical Science Program
dc.contributor.departmentNanostructured Functional Materials (NFM) laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNature Communications
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
dc.contributor.institutionSchool of Material Science and Engineering, University of Science and Technology of China, Anhui 230026, China
dc.contributor.institutionCollege of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
dc.contributor.institutionState Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006, China
dc.contributor.institutionCollaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
dc.contributor.institutionInternational Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
dc.contributor.institutionCollaborative Innovation Center of Quantum Matter, Beijing 100871, China
dc.contributor.institutionState Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, China
dc.contributor.institutionMulti-scale Porous Materials Center,Institute of Advanced Interdisciplinary Studies, Chongqing University, Chongqing 400044, China
dc.contributor.institutionCollege of Sciences, Liaoning Shihua University, Fushun 113001, China
dc.contributor.institutionState Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China
kaust.personSong, Kepeng
kaust.personHan, Yu
refterms.dateFOA2019-08-04T09:13:53Z
dc.date.published-online2019-05-24
dc.date.published-print2019-12


Files in this item

Thumbnail
Name:
s41467-019-10256-3.pdf
Size:
1.831Mb
Format:
PDF
Description:
Publisher's Version PDF

This item appears in the following Collection(s)

Show simple item record

This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Except where otherwise noted, this item's license is described as This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.