Interface state degradation during AC positive bias temperature instability stress

License
http://creativecommons.org/licenses/by-nc-nd/4.0/

Embargo End Date
2021-08-01

Type
Article

Authors
Kang, Soo Cheol
Kim, Seung Mo
Jung, Ukjin
Kim, Yonghun
Park, Woojin
Lee, Byoung Hun

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Online Publication Date
2019-05-10

Print Publication Date
2019-08

Date
2019-05-10

Abstract
The reliability of a bulk fin field-effect transistor (FinFET) with a high-k dielectric/metal-gate stack has been investigated by comparing the effects of DC and AC stresses. It is well known that the relaxation during the off-cycle of the AC stress decreases the Vth shift and enhances the device lifetime due to electron detrapping from the high-k dielectric. We found that the relaxation in the interface traps is significantly weaker than that of bulk traps during the unipolar and bipolar AC stresses. The weak recovery is attributed to the concurrent interface state generation during a positive-bias temperature instability (PBTI) stress. Eventually, the interface traps became a major source of the device drift (over 60%) at the high temperature of 400 K. This finding suggests that a new strategy is required to address the PBTI reliability focusing on the residual interface states as well as the bulk trapping, particularly at a high temperature.

Citation
Kang, S. C., Kim, S. M., Jung, U., Kim, Y., Park, W., & Lee, B. H. (2019). Interface state degradation during AC positive bias temperature instability stress. Solid-State Electronics, 158, 46–50. doi:10.1016/j.sse.2019.05.006

Acknowledgements
This study was partly supported by the Nano Materials Technology Development Program (2016M3A7B4909941) and Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068062) through the National Research Foundation (NRF) of Korea, funded by the Ministry of Science and ICT, and by SAMSUNG System LSI.

Publisher
Elsevier BV

Journal
Solid-State Electronics

DOI
10.1016/j.sse.2019.05.006

Additional Links
https://linkinghub.elsevier.com/retrieve/pii/S003811011830604X

Permanent link to this record