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dc.contributor.authorBristow, Helen
dc.contributor.authorThorley, Karl J.
dc.contributor.authorWhite, Andrew J. P.
dc.contributor.authorWadsworth, Andrew
dc.contributor.authorBabics, Maxime
dc.contributor.authorHamid, Zeinab
dc.contributor.authorZhang, Weimin
dc.contributor.authorPaterson, Alexandra
dc.contributor.authorKosco, Jan
dc.contributor.authorPanidi, Julianna
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorMcCulloch, Iain
dc.date.accessioned2019-07-31T13:54:38Z
dc.date.available2019-07-31T13:54:38Z
dc.date.issued2019-07-23
dc.identifier.citationBristow, H., Thorley, K. J., White, A. J. P., Wadsworth, A., Babics, M., Hamid, Z., … McCulloch, I. (2019). Impact of Nonfullerene Acceptor Side Chain Variation on Transistor Mobility. Advanced Electronic Materials, 5(10), 1900344. doi:10.1002/aelm.201900344
dc.identifier.doi10.1002/aelm.201900344
dc.identifier.urihttp://hdl.handle.net/10754/656275
dc.description.abstractOrganic photovoltaic power conversion efficiencies exceeding 14% can largely be attributed to the development of nonfullerene acceptors (NFAs). Many of these molecules are structural derivatives of IDTBR and ITIC, two common NFAs. By modifying the chemical structure of the acceptor, the optical absorption, energy levels, and bulk heterojunction morphology can be tuned. However, the effect of structural modifications on NFA charge transport properties has not yet been fully explored. In this work, the relationship between chemical structure, molecular packing, and charge transport, as measured in organic thin-film transistors (OTFTs), is investigated for two high performance NFAs, namely O-IDTBR and ITIC, along with their structural derivatives EH-IDTBR and ITIC-Th. O-IDTBR exhibits a higher n-type saturation field effect mobility of 0.12 cm2 V−1 s−1 compared with the other acceptors investigated. This can be attributed to the linear side chains of O-IDTBR which direct an interdigitated columnar packing motif. The study provides insight into the transport properties and molecular packing of NFAs, thereby contributing to understanding the relationship between chemical structure, material properties, and device performance for these materials. The high electron mobility achieved by O-IDTBR also suggests its applications can be extended to use as an n-type semiconductor in OTFTs.
dc.description.sponsorshipThe authors thank KAUST and Eight19 for financial support. They also acknowledge EC FP7 Project SC2 (610115), EC H2020 (643791), EPSRC Projects EP/G037515/1, EP/M005143/1, EP/L016702/1 as well as NSF DMREF program DMREF-1627428.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201900344
dc.rightsArchived with thanks to Advanced Electronic Materials
dc.subjectcharge transport
dc.subjectfield-effect transistors
dc.subjectnonfullerene acceptors
dc.subjectorganic electronics
dc.subjectorganic photovoltaics
dc.titleImpact of Nonfullerene Acceptor Side Chain Variation on Transistor Mobility
dc.typeArticle
dc.contributor.departmentChemical Science
dc.contributor.departmentChemical Science Program
dc.contributor.departmentKAUST Solar Center
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Electronic Materials
dc.rights.embargodate2020-07-24
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Chemistry and Centre for Plastic ElectronicsImperial College London London SW7 2AZ UK
dc.contributor.institutionDepartment of ChemistryUniversity of Kentucky Lexington KY 40506-0055 USA
kaust.personZhang, Weimin
kaust.personPaterson, Alexandra
kaust.personKosco, Jan
kaust.personAnthopoulos, Thomas D.
kaust.personMcCulloch, Iain
dc.relation.issupplementedbyDOI:10.5517/ccdc.csd.cc21ffvs
dc.relation.issupplementedbyDOI:10.5517/ccdc.csd.cc21ffwt
dc.relation.issupplementedbyDOI:10.5517/ccdc.csd.cc21fftr
refterms.dateFOA2020-07-24T00:00:00Z
display.relations<b> Is Supplemented By:</b> <br/> <ul> <li><i>[Dataset]</i> <br/> . DOI: <a href="https://doi.org/10.5517/ccdc.csd.cc21ffvs">10.5517/ccdc.csd.cc21ffvs</a> HANDLE: <a href="http://hdl.handle.net/10754/664733">10754/664733</a></li></ul><b> Is Supplemented By:</b> <br/> <ul> <li><i>[Dataset]</i> <br/> . DOI: <a href="https://doi.org/10.5517/ccdc.csd.cc21ffwt">10.5517/ccdc.csd.cc21ffwt</a> HANDLE: <a href="http://hdl.handle.net/10754/664734">10754/664734</a></li></ul><b> Is Supplemented By:</b> <br/> <ul> <li><i>[Dataset]</i> <br/> . DOI: <a href="https://doi.org/10.5517/ccdc.csd.cc21fftr">10.5517/ccdc.csd.cc21fftr</a> HANDLE: <a href="http://hdl.handle.net/10754/664735">10754/664735</a></li></ul>


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