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dc.contributor.authorLee, Sang Kyung
dc.contributor.authorKim, Yun Ji
dc.contributor.authorHeo, Sunwoo
dc.contributor.authorPark, Woojin
dc.contributor.authorYoo, Tae Jin
dc.contributor.authorCho, Chunhum
dc.contributor.authorHwang, Hyeon Jun
dc.contributor.authorLee, Byoung Hun
dc.date.accessioned2019-07-31T12:58:54Z
dc.date.available2019-07-31T12:58:54Z
dc.date.issued2019-04-10
dc.identifier.citationLee, S. K., Kim, Y. J., Heo, S., Park, W., Yoo, T. J., Cho, C., … Lee, B. H. (2019). Advantages of a buried-gate structure for graphene field-effect transistor. Semiconductor Science and Technology, 34(5), 055010. doi:10.1088/1361-6641/ab0d54
dc.identifier.doi10.1088/1361-6641/ab0d54
dc.identifier.urihttp://hdl.handle.net/10754/656270
dc.description.abstractGraphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs and top-gate GFETs revealed that the performance of buried-gate GFETs is drastically enhanced by having a better gate controllability, achieving three times higher field effect mobility (∼3000 cm2 V-1 s-1) than top-gate GFETs with on/off ratio ∼10. Carrier scattering was also substantially improved by minimizing the fringing field effect, which is found to be the origin of high series resistance in top-gate GFETs. Moreover, we showed by electromagnetic (EM) simulation that the electric field distribution inside the transistors is more uniform at the buried-gate GFETs than the top-gate GFETs.
dc.description.sponsorshipThis work was partially supported by Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068062), Nano Materials Technology Development Program (2016M3A7B4909942) and Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) (2013M3A6B1078873) through the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT, Korea.
dc.publisherIOP Publishing
dc.relation.urlhttp://stacks.iop.org/0268-1242/34/i=5/a=055010?key=crossref.108ed8212c1c85c57a52fb2b93c55d0e
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6641/ab0d54
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectgraphene
dc.subjectfield effect transistor
dc.subjectburied gate
dc.subjecttop gate
dc.subjectstructure
dc.subjectseries resistance
dc.titleAdvantages of a buried-gate structure for graphene field-effect transistor
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalSemiconductor Science and Technology
dc.rights.embargodate2020-04-09
dc.eprint.versionPost-print
dc.contributor.institutionCenter for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
dc.contributor.institutionSchool of Material Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
kaust.personPark, Woojin
dc.date.published-online2019-04-10
dc.date.published-print2019-05-01


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This is an author-created, un-copyedited version of an article accepted for publication/published
in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6641/ab0d54
Except where otherwise noted, this item's license is described as This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6641/ab0d54