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dc.contributor.authorZheng, Lingcheng
dc.contributor.authorHe, Zhihao
dc.contributor.authorZhang, Rui
dc.contributor.authorQu, Jiangtao
dc.contributor.authorFeng, Deqiang
dc.contributor.authorHe, Jie
dc.contributor.authorChen, Hansheng
dc.contributor.authorYun, Fan
dc.contributor.authorCheng, Yahui
dc.contributor.authorLi, Zhiqing
dc.contributor.authorLiu, Hui
dc.contributor.authorZhang, Xixiang
dc.contributor.authorZheng, Rongkun
dc.date.accessioned2019-07-31T08:02:21Z
dc.date.available2019-07-31T08:02:21Z
dc.date.issued2019-06-24
dc.identifier.citationZheng, L., He, Z., Zhang, R., Qu, J., Feng, D., He, J., … Zheng, R. (2019). Enhancement of Anomalous Hall Effect via Interfacial Scattering in Metal-Organic Semiconductor Fe x (C 60 ) 1− x Granular Films Near the Metal-Insulator Transition. Advanced Functional Materials, 29(36), 1808747. doi:10.1002/adfm.201808747
dc.identifier.doi10.1002/adfm.201808747
dc.identifier.urihttp://hdl.handle.net/10754/656258
dc.description.abstractFerromagnetic metal-insulator granular films suffer from superparamagnetism, which causes a decrease in the values and temperature stabilities of the anomalous Hall effect (AHE). In this work, organic semiconductor (OSC) fullerene (C60), instead of the traditional inorganic insulators, is used as the matrix and a series of Fex(C60)1−x (x = 0.58–0.91) granular films are fabricated. By utilizing the strong metal/OSC interfacial hybridization, the temperature stability of both magnetization and AHE is significantly improved, and the disordered scattering and consequently the anomalous Hall coefficient is enhanced. The saturated anomalous Hall resistivity of Fe0.58(C60)0.42 is 74 µΩ cm at 300 K, which is over three times larger than that of Fe0.59(SiO2)0.41 granular film, and it remains 63 µΩ cm at 2 K. The anomalous Hall coefficient of Fe0.58(C60)0.42 is 9.9 × 10−8 Ω cm G−1, which is four orders larger than that of pure Fe and larger than most of the existing inorganic granular films. The roles of the intergrain Coulomb interaction, skew-scattering, side-jump, and intrinsic mechanism in AHE are evaluated. These results indicate that the organic materials have clear advantages in developing anomalous Hall devices.
dc.description.sponsorshipThis work was supported by the following grants: National Natural Science Foundation of China (no. 51871122, 51671108, 51571123, 51101088), Tianjin Natural Science Foundation (no. 17JCZDJC37000), and the Australian Research Council (DP150100018).
dc.publisherWiley
dc.relation.urlhttp://doi.wiley.com/10.1002/adfm.201808747
dc.rightsArchived with thanks to Advanced Functional Materials
dc.subjectanomalous Hall effects
dc.subjectfullerene
dc.subjectgranular films
dc.subjectorganic semiconductors
dc.titleEnhancement of Anomalous Hall Effect via Interfacial Scattering in Metal-Organic Semiconductor Fex(C60)1−x Granular Films Near the Metal-Insulator Transition
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Functional Materials
dc.rights.embargodate2020-01-01
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Electronics and Key Laboratory of Photo-Electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin, 300072, China
dc.contributor.institutionSchool of Physics, The University of Sydney, NSW, 2006, Australia
kaust.personZhang, Xixiang
refterms.dateFOA2020-01-01T00:00:00Z


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