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dc.contributor.authorLiu, Xiang
dc.contributor.authorMi, Wenbo
dc.contributor.authorZhang, Qiang
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2019-07-21T13:10:40Z
dc.date.available2019-07-21T13:10:40Z
dc.date.issued2019-06-17
dc.identifier.citationLiu, X., Mi, W., Zhang, Q., & Zhang, X. (2019). Negative differential resistance and magnetotransport in Fe3O4/SiO2/Si heterostructures. Applied Physics Letters, 114(24), 242402. doi:10.1063/1.5092872
dc.identifier.doi10.1063/1.5092872
dc.identifier.urihttp://hdl.handle.net/10754/656141
dc.description.abstractThe electronic transport and magnetotransport properties of Fe3O4/SiO2/Si heterostructures were investigated with a current source. Negative differential resistance is observed in Fe3O4/SiO2/p-Si heterostructures. The measurement circuit with four electrodes that I+ (I−) and V+ (V−) came into contact with the Fe3O4 (Si) layer introduces an in-plane transport into the heterostructures. By decreasing the temperature, the in-plane conductive channel switches from Fe3O4 to p-Si. However, the in-plane current is still carried by Fe3O4 in Fe3O4/SiO2/n-Si heterostructures. The formation of an accumulation layer in p-Si facilitates conductive channel switching (CCS), while the depletion layer in n-Si hampers the CCS. At 150 K, a magnetic-field-independent magnetoresistance (MR) in Fe3O4/SiO2/p-Si heterostructures manifests the conductive channel in the space charge region of p-Si. A positive MR generated from the increased electronic scattering in a trapezoidal space charge region reshaped by the magnetic field has been detected.
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China (No. U1632152) and Key Project of Natural Science Foundation of Tianjin (No. 16JCZDJC37300).
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.5092872
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.5092872.
dc.titleNegative differential resistance and magnetotransport in Fe3O4/SiO2/Si heterostructures
dc.typeArticle
dc.contributor.departmentImaging & Characterization Laboratory
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentThin Films & Characterization
dc.identifier.journalApplied Physics Letters
dc.rights.embargodate2020-06-17
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
kaust.personZhang, Qiang
kaust.personZhang, Xixiang
refterms.dateFOA2020-06-17T00:00:00Z


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