Spin-Orbit Torque Driven Multi-State Device for Memory Applications
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/655944
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AbstractWe report the design, fabrication and measurement of a spin-orbit torque (SOT) driven multi-state memory. The multi-state memory is based on a 3-nm thick Ni81Fe19 (Py) patterned in the shape of four intersecting ellipses (octagram). Writing is performed by injecting a charge current along one of the Pt wires, which generates a transverse pure spin current capable of switching Py between its states. Information is read through a magnetic tunnel junction (MTJ) using four-point technique.
Conference/Event name2019 Electron Devices Technology and Manufacturing Conference (EDTM)