Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics
Type
ArticleAuthors
Ranjan, A.Raghavan, N.
Puglisi, F.M.
Mei, S.
Padovani, A.
Larcher, L.
Shubhakar, K.
Pavan, P.
Bosman, M.
Zhang, Xixiang
O’Shea, S.J.
Pey, K.L.
KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2019Permanent link to this record
http://hdl.handle.net/10754/655880Metadata
Show full item recordAbstract
Dielectric breakdown in 2-D insulating films for future logic device technology is not well understood yet, in contrast to the extensive insight we have in the breakdown of bulk dielectric films such as HfO2 and SiO2. In this study, we investigate the stochastic nature of breakdown (BD) in hexagonal boron nitride (h-BN) films using ramp voltage stress and examine the BD trends as a function of stress polarity, area and temperature. We present evidence that points to a non-Weibull distribution for h-BN BD and use multi-scale physics-based simulations to extract the energetics of the defects that are precursors to BD, which happens to be boron vacancies.Citation
Ranjan, A., Raghavan, N., Puglisi, F. M., Mei, S., Padovani, A., Larcher, L., … Pey, K. L. (2019). Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics. IEEE Electron Device Letters, 40(8), 1321–1324. doi:10.1109/led.2019.2923420Journal
IEEE Electron Device LettersAdditional Links
https://ieeexplore.ieee.org/document/8737953/https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8737953