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dc.contributor.authorXu, Xiangming
dc.contributor.authorWang, Zhenwei
dc.contributor.authorLopatin, Sergei
dc.contributor.authorA. Quevedo-Lopez, Manuel
dc.contributor.authorN. Alshareef, Husam
dc.date.accessioned2019-06-26T11:38:23Z
dc.date.available2019-06-26T11:38:23Z
dc.date.issued2019-01-13
dc.identifier.urihttp://hdl.handle.net/10754/655727
dc.description.abstractWafer scale quasi single crystalline MoS2 realized by epitaxial phase conversion Recent Technological Demands: The fabrication of large-scale, single-crystalline, silicon wafers has enabled the modern electronics industry. Wafer-scale, single-crystalline, 2D graphene was first fabricated in 2014 Until Now, wafer scale MoS2 film has been realized, but all with polycrystalline structure, which limit the reliability of MoS2 based integrated circuit device. Develop a new fabrication process for fabricating single crystalline MoS2 film at wafer scale is significant and necessary
dc.relation.urlhttps://epostersonline.com/wep2019/node/114
dc.titleWafer scale quasi single crystalline MoS2 realized by epitaxial phase conversion
dc.typePoster
dc.conference.dateJANUARY 13 - 17 , 2019
dc.conference.nameWEP Library ePoster competition 2019
dc.conference.locationKAUST
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas
refterms.dateFOA2019-06-26T11:38:23Z


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