Single and Multiple Longitudinal Wavelength Generation in Green Diode Laser
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/655515
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AbstractSingle and multiple wavelength laser systems are presented that employ self-injection locked InGaN/GaN green laser diodes in an external cavity configuration with a partially reflective mirror. A stable and simultaneous locking of up to four longitudinal Fabry–Perot modes of the system cavity is demonstrated with appreciable signal-to-noise-ratio of ∼13 dB and average mode linewidth of ∼150 pm. The multi-wavelength spectrum exhibited a flat-top emission with nearly equal power distribution among the modes and an analogous mode spacing of ∼0.5 nm. This first demonstration of multi-wavelength generation source is highly attractive in a multitude of cross-disciplinary field applications besides asserting the prospects of narrow wavelength spaced multiplexed visible light communication. Moreover, an extended two-stage self-injection locked near single wavelength visible laser system is also presented. An ultra-narrow linewidth of ∼34 pm is realized at 525.05 nm locked wavelength from this innovative system, with ∼20 dB side-mode-suppression-ratio; thus signifying a paradigm shift toward semiconductor lasers for near single lasing wavelength generation, which is presently dominated by other kinds of laser technologies.
SponsorsThis work was supported in part by the King Abdulaziz City for Science and Technology (KACST) under Grants EE2381 and KACST TIC R2-FP-008, in part by King Abdullah University of Science and Technology (KAUST) baseline funding under Grants BAS/1/1614-01-01, KCR/1/2081-01- 01, and GEN/1/6607-01-01, and in part by KAUST-KFUPM Special Initiative (KKI) Program (REP/1/2878-01-01).