Perovskite-Based Artificial Multiple Quantum Wells

Semiconductor quantum well structures have been critical to the development of modern photonics and solid-state optoelectronics. Quantum level tunable structures have introduced new transformative device applications and afforded a myriad of groundbreaking studies of fundamental quantum phenomena. However, noncolloidal, III-V compound quantum well structures are limited to traditional semiconductor materials fabricated by stringent epitaxial growth processes. This report introduces artificial multiple quantum wells (MQWs) built from CsPbBr3 perovskite materials using commonly available thermal evaporator systems. These perovskite-based MQWs are spatially aligned on a large-area substrate with multiple stacking and systematic control over well/barrier thicknesses, resulting in tunable optical properties and a carrier confinement effect. The fabricated CsPbBr3 artificial MQWs can be designed to display a variety of photoluminescence (PL) characteristics, such as a PL peak shift commensurate with the well/barrier thickness, multiwavelength emissions from asymmetric quantum wells, the quantum tunneling effect, and long-lived hot-carrier states. These new artificial MQWs pave the way toward widely available semiconductor heterostructures for light-conversion applications that are not restricted by periodicity or a narrow set of dimensions.

Lee KJ, Turedi B, Sinatra L, Zhumekenov AA, Maity P, et al. (2019) Perovskite-Based Artificial Multiple Quantum Wells. Nano Letters. Available:

The authors gratefully acknowledge the financial support provided by King Abdullah University of Science and Technology (KAUST). This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (NRF-2017R1C1B5017953).

American Chemical Society (ACS)

Nano Letters


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