Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Advanced Semiconductor Laboratory
Permanent link to this recordhttp://hdl.handle.net/10754/653040
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AbstractWe report on the demonstration of a 386 nm light emission and detection dual-functioning device based on nonpolar a-plane n-ZnO/i-ZnO/p-Al0.1Ga0.9N heterojunction under both forward and reverse bias. The electroluminescence intensity under reverse bias is significantly stronger than that under forward bias, facilitated by carrier tunneling when the valence band of p-AlGaN aligns with the conduction band of i-ZnO under reverse bias. Also amid reverse bias, the photodetection was observed and applied in a duplex optical communication device. Optical polarization of the light emission is studied for potential polarization-sensitive device applications. The proposed device provides an important pathway for the multifunctional devices operating in a UV spectrum.
CitationDai J, Chen J, Li X, Zhang J, Long H, et al. (2019) Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction. Optics Letters 44: 1944. Available: http://dx.doi.org/10.1364/OL.44.001944.
SponsorsKey Project of Chinese National Development Programs (2016YFB0400804); Key Laboratory of Infrared Imaging Materials and Detectors; Shanghai Institute of Technical Physics, Chinese Academy of Sciences (CAS) (IIMDKFJJ-17-09); National Natural Science Foundation of China (NSFC) (11574166, 61377034, 61675079, 61774065); KAUST Baseline (BAS/1/1664-01-01); KAUST Competitive Research (URF/1/3437-01-01); GCC Research Council (REP/1/3189-01-01); Director Fund of WNLO. The authors acknowledge the numerical calculations conducted by Prof. Zi-Hui Zhang at the Hebei University of Technology.
PublisherThe Optical Society