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dc.contributor.authorYu, Weili
dc.contributor.authorYin, Jun
dc.contributor.authorLi, Yuan
dc.contributor.authorLai, Bo
dc.contributor.authorJiang, Tong
dc.contributor.authorLi, Yangyang
dc.contributor.authorLiu, Huiwen
dc.contributor.authorLiu, Jiale
dc.contributor.authorZhao, Chen
dc.contributor.authorSingh, Subhash C.
dc.contributor.authorChen, Jingsheng
dc.contributor.authorBin, Lin
dc.contributor.authorIdriss, Hicham
dc.contributor.authorGuo, Chunlei
dc.date.accessioned2019-05-21T13:11:53Z
dc.date.available2019-05-21T13:11:53Z
dc.date.issued2019-03-12
dc.identifier.citationYu W, Yin J, Li Y, Lai B, Jiang T, et al. (2019) Ag2S Quantum Dots as an Infrared Excited Photocatalyst for Hydrogen Production. ACS Applied Energy Materials 2: 2751–2759. Available: http://dx.doi.org/10.1021/acsaem.9b00091.
dc.identifier.issn2574-0962
dc.identifier.issn2574-0962
dc.identifier.doi10.1021/acsaem.9b00091
dc.identifier.urihttp://hdl.handle.net/10754/653037
dc.description.abstractH2 production using nanoscale semiconductors via photocatalytic water splitting is a much sought-after technology to curb carbon dioxide emission. Among the many challenges found to date is the search for a stable semiconductor photocatalyst responding to visible and preferably visible and IR light. Ag2S is a narrow bandgap semiconductor with a bulk electronic gap smaller than that needed to split water. In this work, using a solvent thermal strategy, we have increased its bandgap energy by shifting up the conduction band edge to make it suitable for the electron transfer reaction to hydrogen ions. The Ag2S quantum dots (QDs) were tested as both electrocatalysts and photocatalysts. As electrocatalysts, Ag2S QDs with an absorption peak at 800 nm (QD800) showed the highest H2 evolution activity with a Tafel slope of 89 mV/dec with an overpotential of 0.32 V. As photocatalysts, H2 was produced at a rate of 858 μmol h–1 gcatal–1 under a white light flux of 100 mW cm–2. Moreover, QD800 was also found to be active under only near-infrared excitation (800 ± 20 nm). This is the longest wavelength reported so far to excite a semiconductor and generate H2.
dc.description.sponsorshipThis work was supported by National Natural Science Foundation of China (91750205, 61774155, 51102107 91750205, and 21404015) and the National Key R & D Program of China (2017YFB1104700).
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsaem.9b00091
dc.subjecthydrogen evolution reaction
dc.subjectnear-infrared
dc.subjectphotocatalysis
dc.subjectquantum dots
dc.subjectsilver sulfide
dc.titleAg2S Quantum Dots as an Infrared Excited Photocatalyst for Hydrogen Production
dc.typeArticle
dc.contributor.departmentKAUST Catalysis Center (KCC)
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSABIC - Corporate Research and Innovation Center (CRI) at KAUST
dc.identifier.journalACS Applied Energy Materials
dc.contributor.institutionThe Guo China-US Joint Photonics Laboratory (GPL), State Key Laboratory of Applied Optics (SKLAO), Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun 130033, P. R. China
dc.contributor.institutionThe Institute of Optics, University of Rochester, Rochester, New York 14627, United States
dc.contributor.institutionDepartment of Journal, Jilin University of Arts, Changchun 130021, P. R. China
dc.contributor.institutionDepartment of Materials Science and Engineering, National University of Singapore, Singapore 117576, Singapore
dc.contributor.institutionState Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, P. R. China
dc.contributor.institutionSchool of Energy Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
dc.contributor.institutionDepartment of Chemistry, University College London, London WC1E 6BT, U.K.
kaust.personYu, Weili
kaust.personYin, Jun
kaust.personLi, Yuan
kaust.personBin, Lin
kaust.personIdriss, Hicham
dc.date.published-online2019-03-12
dc.date.published-print2019-04-22


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