High-Performance Field-Effect Transistors Based on αP and βP

Montes Muñoz, Enrique; Schwingenschlögl, Udo

High-Performance Field-Effect Transistors Based on αP and βP

Files

paper.pdf (911.61 KB)

Type

Article

Authors

Montes Muñoz, Enrique

Schwingenschlögl, Udo

KAUST Department

Computational Physics and Materials Science (CPMS)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division

Online Publication Date

2019-03-25

Print Publication Date

2019-05

Date

2019-03-25

Abstract

The electronic properties of black and blue phosphorus nanoribbons are investigated, which enables the proposal of junction-free field-effect transistors that comprise metallic armchair nanoribbons as electrodes and, in between, a semiconducting zigzag nanoribbon as channel material (cut out of a single sheet of monolayer black or blue phosphorus). Using first-principles calculations and the nonequilibrium Green's function method, the proposed field-effect transistors are characterized. It is found that it is possible to achieve outstanding performance, with high on/off ratios, low subthreshold swings, and high transconductances.

Citation

Montes E, Schwingenschlögl U (2019) High-Performance Field-Effect Transistors Based on αP and βP. Advanced Materials 31: 1807810. Available: http://dx.doi.org/10.1002/adma.201807810.

Acknowledgements

The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).