KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Materials Science and Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/652985
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AbstractThe electronic properties of black and blue phosphorus nanoribbons are investigated, which enables the proposal of junction-free field-effect transistors that comprise metallic armchair nanoribbons as electrodes and, in between, a semiconducting zigzag nanoribbon as channel material (cut out of a single sheet of monolayer black or blue phosphorus). Using first-principles calculations and the nonequilibrium Green's function method, the proposed field-effect transistors are characterized. It is found that it is possible to achieve outstanding performance, with high on/off ratios, low subthreshold swings, and high transconductances.
CitationMontes E, Schwingenschlögl U (2019) High-Performance Field-Effect Transistors Based on αP and βP. Advanced Materials 31: 1807810. Available: http://dx.doi.org/10.1002/adma.201807810.
SponsorsThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).