Show simple item record

dc.contributor.authorEl-Zohry, Ahmed
dc.contributor.authorShaheen, Basamat S.
dc.contributor.authorBurlakov, Victor M.
dc.contributor.authorYin, Jun
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorShikin, Semen
dc.contributor.authorOoi, Boon S.
dc.contributor.authorBakr, Osman
dc.contributor.authorMohammed, Omar F.
dc.date.accessioned2019-05-21T12:58:51Z
dc.date.available2019-05-21T12:58:51Z
dc.date.issued2019-02-01
dc.identifier.citationEl-Zohry AM, Shaheen BS, Burlakov VM, Yin J, Hedhili MN, et al. (2019) Extraordinary Carrier Diffusion on CdTe Surfaces Uncovered by 4D Electron Microscopy. Chem 5: 706–718. Available: http://dx.doi.org/10.1016/j.chempr.2018.12.020.
dc.identifier.issn2451-9294
dc.identifier.doi10.1016/j.chempr.2018.12.020
dc.identifier.urihttp://hdl.handle.net/10754/652967
dc.description.abstractThe lack of understanding and control over losses of charge carriers at the surfaces/interfaces of solar cell materials is the major factor limiting overall device conversion efficiency. This work describes a breakthrough in real-space visualization of charge-carrier dynamics at the atomic surface level of CdTe, a leading direct bandgap semiconductor in commercial thin-film solar cells. We present a fundamentally new understanding of charge-carrier diffusion and carrier trapping of CdTe single crystals using a four-dimensional scanning ultrafast electron microscope (4D-SUEM)—the only instrument of its kind currently in operation. We found that the diffusion of charge carriers at surfaces vary within extreme ranges, from extraordinary to virtually trapped when surface orientation was changed from (110) to (211). The work presented here is a milestone in addressing the device performance bottlenecks stemming from surfaces and a new avenue to create CdTe-based optoelectronic devices.
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). We thank Dr. Daliang Zhang (KAUST Core Labs) for helping with the HR-TEM analysis and simulations.
dc.publisherElsevier BV
dc.relation.urlhttps://www.sciencedirect.com/science/article/pii/S2451929418305837
dc.subjectcrystal orientation
dc.subjectDFT calculations
dc.subjectneat-surfaces
dc.subjectoxidation layers
dc.subjectReal-space imaging
dc.subjectrenewable energy materials
dc.subjectSDG7: Affordable and clean energy
dc.subjectsurface dynamics
dc.subjectSurface termination
dc.subjectultrafast electron imaging
dc.titleExtraordinary Carrier Diffusion on CdTe Surfaces Uncovered by 4D Electron Microscopy
dc.typeArticle
dc.contributor.departmentChemical Science Program
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentFunctional Nanomaterials Lab (FuNL)
dc.contributor.departmentKAUST Catalysis Center (KCC)
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSurface Science
dc.contributor.departmentUltrafast Laser Spectroscopy and Four-dimensional Electron Imaging Research Group
dc.identifier.journalChem
dc.contributor.institutionDepartment of Physics, University of Oxford, Oxford, OX1 3PU, , United Kingdom
kaust.personEl-Zohry, Ahmed
kaust.personShaheen, Basamat
kaust.personYin, Jun
kaust.personHedhili, Mohamed N.
kaust.personShikin, Semen
kaust.personOoi, Boon S.
kaust.personBakr, Osman M.
kaust.personMohammed, Omar F.
dc.date.published-online2019-02-01
dc.date.published-print2019-03


This item appears in the following Collection(s)

Show simple item record