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    Investigating Semiconductor Nanostructures Functionalized by Emerging Materials for Optoelectronic Devices

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    Name:
    Norah Alwadai - Dissertation - Final Draft.pdf
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    4.762Mb
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    PDF
    Description:
    Norah Alwadai - Dissertation - Final Draft
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    Type
    Dissertation
    Authors
    Alwadai, Norah M. cc
    Advisors
    Roqan, Iman S. cc
    Committee members
    Zhang, Xixiang cc
    Han, Yu cc
    El-Bashir, Samah
    Program
    Material Science and Engineering
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2019-05-19
    Embargo End Date
    2020-05-20
    Permanent link to this record
    http://hdl.handle.net/10754/652921
    
    Metadata
    Show full item record
    Access Restrictions
    At the time of archiving, the student author of this dissertation opted to temporarily restrict access to it. The full text of this dissertation became available to the public after the expiration of the embargo on 2020-05-20.
    Abstract
    Wide and direct bandgap semiconductors (WBSs) are promising materials for many deep UV (DUV) applications. However, several challenges presently hinder the enhancement of DUV optoelectronics, such as low crystal quality, as well as complex and costly fabrication and growth processes that prevent production of high-performance devices, especially for large-scale applications. As a part of the study reported in this dissertation, I demonstrate several novel WBS-based devices with improved or novel functionalities, for the first time. The first part of work reported in this dissertation is designated for the novel, highly ordered and well-defined hexagonal ZnO nanotube (NT) arrays that were obtained without a catalyst. These arrays were grown on a p-GaN template using pulsed laser deposition (PLD), resulting in a highly bright and cost-effective UV light emitting diode (LED). In the second part, Gd-doped ZnO NRs grown on cost-effective metal substrate by PLD are presented and it is demonstrated that these can be functionalized by CH3NH3PbI3 perovskite to extend the functionality of ZnO photodetector from the ultraviolet to the infrared region (λ > 1000 nm), for the first time. The work reported in the third part demonstrates that the PLD method adopted in the present study can be extended to other high-quality metal oxide nanostructures. For this purpose, uniform p-type CuO pyramids were grown by PLD on Si substrate without a metal catalyst. Moreover, laser ablation method was advanced from vacuum based (PLD) to liquid based (femtosecond-laser ablation in liquid − FLAL) method to synthesize high-quality ZnO quantum dots (QDs). Adoption of this novel strategy allows producing high-performance self-powered DUV photodetectors based on p-CuO pyramids/n-ZnO QDs heterojunction device. In the last part, this research field is further advanced by exploring the functionality of other metal oxides synthesized by FLAL to fabricate a high-performance self-powered DUV photodetector. Such photodetector was fabricated using p-MnO QDs that were synthesized by FLAL and functionalized by high-quality mechanically exfoliated n-β-Ga2O3 nanoflakes as an active heterojunction layer grown on SiO2, confirming its superior response. All fabrication strategies, including use of heterojunction structures (mainly p−n junction), adopted in this work overcome the aforementioned issues related to the currently available WBS devices.
    Citation
    Alwadai, N. M. (2019). Investigating Semiconductor Nanostructures Functionalized by Emerging Materials for Optoelectronic Devices. KAUST Research Repository. https://doi.org/10.25781/KAUST-48V77
    DOI
    10.25781/KAUST-48V77
    ae974a485f413a2113503eed53cd6c53
    10.25781/KAUST-48V77
    Scopus Count
    Collections
    Dissertations; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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