High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors
AuthorsTak, B. R.
Torres-Castanedo, Carlos G.
KAUST DepartmentAdvanced Semiconductor Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2019-04-08
Print Publication Date2019-04-14
Permanent link to this recordhttp://hdl.handle.net/10754/652844
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AbstractHigh-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo to dark current ratio of about 7100 was observed at room temperature and 2.3 at a high temperature of 250 °C with 10 V applied bias. A decline in photocurrent was observed until a temperature of 150 °C beyond which it increased with temperature up to 250 °C. The suppression of the UV and blue band was also observed in the normalized spectral response curve above 150 °C temperature. Temperature-dependent rise and decay times of temporal response were analyzed to understand the associated photocurrent mechanism at high temperatures. Electron–phonon interaction and self-trapped holes were found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of β-Ga2O3 MSM deep UV photodetectors.
CitationTak BR, Garg M, Dewan S, Torres-Castanedo CG, Li K-H, et al. (2019) High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors. Journal of Applied Physics 125: 144501. Available: http://dx.doi.org/10.1063/1.5088532.
SponsorsB.R.T. and R.S. would like to thank the Department of Physics, IIT Delhi (IITD), for providing XRD facility. We would also like to acknowledge the Nanoscale Research Facility (NRF), IITD, for device fabrication and characterizations. The Department of Science and Technology (DST), India, is highly appreciated for awarding INSPIRE research fellowship to B.R.T. for the Ph.D. programme. The IITD authors acknowledge the NRF project (No. NRF/RP02395) for research support. The KAUST authors are thankful for the support of KAUST baseline fund (No. BAS/1/1664-01-01), KAUST CRG (No. URF/1/3437-01-01), and GCC Research Council (No. REP/1/3189-01-01).
JournalJournal of Applied Physics